
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE9517-B
Issued Date : 1997.06.06
Revised Date : 2000.10.01
Page No. : 1/3
HM27
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington transistor.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 60 V
VCES Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA
BVCES 60 - - V IC=100uA
BVEBO 10 - - V IE=10uA
ICBO - - 100 nA VCB=50V
IEBO - - 100 nA VBE=10V
ICES - - 500 nA VCE=50V
*VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA
VBE(on) - - 2 V VCE=5V, IC=100mA
*hFE1 10K - - VCE=5V, IC=10mA
*hFE2 10K - - VCE=5V, IC=100mA
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :HE9517-B
Issued Date : 1997.06.06
Revised Date : 2000.10.01
Page No. : 2/3
100000
10000
hFE
1000
Current Gain & Col lector Current
VCE=5V
1 10 100 1000
Collector Curren t ( mA)
On Voltage & Collector Current
10
10
Saturation Volt age & Col lector Current
1
CE(sat)
V
Saturation Voltage (V)
0.1
1 10 100 1000
10
Capacit an ce & R everse-Biased Voltage
Collector Current (mA)
@ IC=1000I
B
1
On Voltage (mV)
0.1
0.01 0.1 1 10 100 1000
BE(on)
V
@ VCE=5V
Collector Current (mA)
Safe Operating Area
10000
PT=1ms
1000
Collector Curren t ( mA)
100
10
PT=100 ms
PT=1s
Capacitance (pF)
Cob
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
1
1 10 100
Forwar d Vol tage (V)
HSMC Product Specification