HSMC HM14 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE5908-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM14
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM14 is a darlington amplifier transistor designed for
applications requiring extremely high current gain.
Features
High D.C current gain
•
HM14 is complementary to HM64
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current....................................................................................................... 300 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 30 - - V IC=100uA, IE=0
BVCES 30 - - V IC=100uA, IB=0
BVEBO 10 - - V IE=10uA, IC=0
ICBO - - 100 nA VCB=30V, IE=0
IEBO - - 100 nA VEB=10V, IC=0
*VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA
*VBE(on) - - 2 V VCE=5V, IC=100mA
*hFE1 10K - - VCE=5V, IC=10mA
*hFE2 20K - - VCE=5V, IC=100mA
fT 125 - - MHz VCE=5V, IC=10mA, f=100MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :HE5908-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 2/3
100000
VCE=5V
10000
hFE
1000
0.1 1 10 100 1000
Collector Curren t ( mA)
On Vol t age & Coll ect or Cur r ent
10
Current Gain & Col lector Current
1
CE(sat)
V
@ IC=1000I
Saturation Voltage (V)
0.1
1 10 100 1000
Collector Current (mA)
B
Cut off Fr equen cy & Collector Cu rrent
1000
VCE=5V
Saturation Voltage & Collect or Curr ent
1
On Voltage (mV)
0.1
0.01 0.1 1 10 100 1000
BE(on)
V
@ VCE=5V
Collector Curren t ( mA)
Capacit ance & Reverse- Bia sed Voltage
10
Cob
Capac itance ( p F )
100
Cutoff Frequence (MHz)
10
1 10 100 1000
Collector Current (mA)
Sa fe Opera ti ng Area
10000
1000
100
Collector Current (mA)
10
PT=1ms
PT=100ms
PT=1s
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
1
1 10 100
Forwar d Biased Vol tage (V)
HSMC Product Specification
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