HSMC HLB125E Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HLB125E

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HLB125E is designed for lighting applications and low switch-mode
power supplies. And it is high voltage capability and high switching speeds.

Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4

Features

• High Speed Switching

• Low Saturation Voltage

• High Reliability

Absolute Maximum Ratings

• Maximum Temperatures

Stora ge Temperature........................................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................................................ +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)................................................................................................. 40 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage.................................................................................................... 600 V

VCEO Collector to Emitter Voltage ................................................................................................ 400 V

VEBO Emitter to Base Voltage.......................................................................................................... 9 V

IC Collector Current (DC)................................................................................................................... 5 A

IC Collector Current (Pulse)............................................................................................................... 8 A

IB Base Current (DC)......................................................................................................................... 2 A

IB Base Current (Pulse)..................................................................................................................... 4 A

TO-220

C

B

E

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 9 - - V IE=10mA, IC=0

ICES - - 100 UA VCE=700V

ICEO - - 100 uA VCE=400V
*VCE(sat)1 - - 0.5 V IC=1A, IB=0.2A
*VCE(sat)2 - - 0.7 V IC=2A, IB=0.4A
*VCE(sat)3 - - 1.1 V IC=3A, IB=0.75A
*VBE(sat)1 - - 1.1 V IC=1A, IB=0.2A
*VBE(sat)2 - - 1.2 V IC=2A, IB=0.4A

*hFE1 8 - 35 IC=2A, VCE=5V
*hFE2 10 - - IC=10mA, VCE=5V

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank B1 B2 B3 B4 B5
hFE1 8-17 15-21 19-25 23-31 29-35

HLB125E HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 2/4

100

Current Gai n & Collector Current

125oC

25oC

10

hFE

hFE @ VCE=5V

1

0.1 1 10 100 1000 10000

100000

10000

Collector Current-IC (mA)

Saturation Voltage & Coll cet or Cur rent

CE(sat)

V

@ IC=5I

B

75oC

125oC

10000

CE(sat)

V

1000

100

Saturation Voltage (mV)

10

1 10 100 1000 10000

B

@ IC=4I

125oC

Collector Current- IC (mA)

75oC

Sat ura tion Voltage & C olltct or Cur rent

10000

Sat urati on Voltage & Collector Cu rren t

@ IC=5I

B

BE(sat)

V

25oC

1000

Saturat ion Volta ge ( m V)

100

10

1 10 100 1000 10000

10000

1000

On Voltage ( m V)

ON Voltage & Collector Current

25oC

Collector Current-IC (mA)

BE(ON)

V

@ VCE=5V

75oC

1000

Saturation Voltage (mV)

100

1 10 100 1000 10000

1000

100

Capacitance (Pf )

25oC

125oC

Collector Current-IC (mA)

Ca pacitance & Reverse-Biased Voltage

75oC

Cob

100

1 10 100 1000 10000

Collector Current (mA)

10

0.1 1 10 100

Reverse-Biased Vol t ag e ( V)

HLB125E HSMC Product Specification