HSMC HLB123T Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 1/3
HLB123T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123T is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
•
(Ta=25°C)
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -50 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C) ............................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C)................................................................................................. 30 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage ................................................................................................ 600 V
BVCEO Collector to Emitter Voltage ............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC).................................................................................................................. 1 A
IC Collector Current (Pulse).............................................................................................................. 2 A
(Ta=25°C)
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 8 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=600V, IE=0
IEBO - - 10 uA VBE=9V, IC=0
*VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA
*VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA
*VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA
*VBE(sat)2 - - 1.8 V IC=0.3A, IB=30mA
*hFE1 10 - 50 IC=0.3A, VCE=5V
*hFE2 10 - - IC=0.5A, VCE=5V
*hFE3 6 - - IC=1A, VCE=5V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank B1 B2 B3 B4 B5 B6 B7 B8
Range 10-17 13-22 18-27 23-32 28-37 33-42 38-47 43-50
HLB123T HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 2/3
100
Current Gain & Collector Current
hFE
10
1 10 100 1000
1000
Collector Curren t ( mA)
On Vol t age & Coll ect or Cur ren t
hFE @ VCE=5V
BE(on)
V
@ VCE=5V
1000
100
10
Satu r ation Voltage ( m V)
1
Saturation Voltage & C ollect or Current
BE(sat)
V
CE(sat)
V
1 10 100 1000
Collector Curren t ( mA)
@ IC=10I
@ IC=10I
B
B
Capa citan ce & Rev er se- Biased Vol t age
100
On Voltage (mV)
100
1 10 100 1000
Collector Curren t ( mA)
Switching Time & Collector Current
10.0
VCC=100V, IC=5IB1=-5I
1.0
Switching Time ( us)
B2
Tstg
Tf
Ton
10
Capac itance (pF)
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
Cob
Safe Operating Area
10000
1000
PT=1ms
100
Collector Curren t ( mA)
PT=100ms
PT=1s
0.1
0.1 1.0
Collector Curren t ( A)
10
1 10 100 1000
Forwar d Vol tage (V)
HLB123T HSMC Product Specification
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