HSMC HLB123D Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HLB123D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123D is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 1/4
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -50 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 8 V
IC Collector Current (DC) .................................................................................................................. 1 A
IC Collector Current (Pulse) .............................................................................................................. 2 A
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 8 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=600V, IE=0
IEBO - - 10 uA VBE=9V, IC=0
*VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA
*VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA
*VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA
*VBE(sat)2 - - 1.8 V IC=0.3A, IB=30Ma
*hFE1 10 - 50 IC=0.3A, VCE=5V
*hFE2 10 - - IC=0.5A, VCE=5V
*hFE3 6 - - IC=1A, VCE=5V
Ton - 0.4 1.1 uS VCC=100V, IC=1A, IB1=IB2=0.2A
Tstg - 2.4 4 uS VCC=100V, IC=1A, IB1=IB2=0.2A
Toff - 0.3 0.7 uS VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank B1 B2 B3 B4 B5 B6 B7 B8
Range 10-17 13-22 18-27 23-32 28-37 33-42 38-47 43-50
HLB123D HSMC Product Specification
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6603
Issued Date : 1993.03.15
Revised Date : 2002.01.07
Page No. : 2/4
100
125oC
25oC
75oC
10
hFE
hFE @ VCE=5V
1
1 10 100 1000 10000
Collector Current IC (mA)
Sat urati on Voltage & Collector Curren t
10000
Current Gain & Collector Current
10000
1000
100
Satur ation Voltage ( m V)
25oC
10
1 10 100 1000 10000
125oC
V
Collect o r Current IC (mA)
CE(sat)
On Voltage & Collector C urrent
1000
BE(on)
V
@ VCE=5V
Sat urati on Voltage & Collector Curren t
75oC
@ IC=10I
B
75oC
1000
Saturat ion Voltag e ( m V)
100
1 10 100 1000 10000
25oC
125oC
Collect o r Current IC (mA)
BE(sat)
V
Capacitance & Rev erse-Biased Volatge
100
10
Capacitance (pF)
Cob
@ IC=10I
On Voltage ( m V)
B
100
1 10 100 1000
10.0
1.0
Switc hin g Time (us
Swi tching Time & Collect or Current
VCC=100V, IC=5IB1=-5I
Collector Current (mA)
B2
Tstg
Tf
Ton
1
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
0.1
0.1 1.0
Collector Current (A)
HLB123D HSMC Product Specification
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