HSMC HLB122T Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HLB122T
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122T is a medium power transistor designed for use in switching
applications.
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/3
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
TO-126
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse) ...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse).............................................................................................................. 200 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=100uA
BVCEO 400 - - V IC=10mA
BVEBO 6 - - V IE=10uA
ICBO - - 10 uA VCB=600V
ICEO - - 10 uA VCE=400V
IEBO - - 10 uA VEB=6V
*VCE(sat)1 - - 400 mV IC=100mA, IB=20mA
*VCE(sat)2 - - 800 mV IC=300mA, IB=60mA
*VBE(sat) - - 1 V IC=100mA, IB=20mA
*hFE1 10 - 40 VCE=10V, IC=0.1A
*hFE2 10 - - VCE=10V, IC=0.5A
tf - - 0.6 uS VCC=100V, IC=0.3A,IB1=-IB2=0.06A
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank B1 B2 B3 B4 B5 B6
Range 10-17 13-22 18-27 23-32 28-37 33-40
HLB122T HSMC Product Specification
HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 2/3
100
Cur rent Ga in & C o llector Current
75oC125oC
25oC
10
hFE
hFE @ VCE=10
1
1 10 100 1000
10000
Sat urati on Voltage & Collector Current
Collector Current-IC (mA)
BE(sat)
V
@ IC=5I
B
10000
1000
100
Saturation Voltage (mV)
10
1
1 10 100 1000
125oC
V
Collector Current-IC (mA)
CE(sat)
Capacit an ce & Reverse-Bia sed Voltage
100
Sat urati on Voltage & Collector Current
75oC
@ IC=5I
25oC
B
1000
Saturation Voltage (mV)
100
25oC
125oC
1 10 100 1000
Collector Current-IC (mA)
75oC
Safe Oper atig Area
10
PT=1ms
(A)
1
C
PT=400ms
0.1
Collector Current-I
PT=100ms
10
Capacitance (pF)
1
0.1 1 10 100
Reverse- Biased Voltage ( V)
Cob
0.01
1 10 100 1000
Forward-V
CE
(V)
HLB122T HSMC Product Specification
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