HSMC HLB122I Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HLB122I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122I is a medium power transistor designed for use in switching
applications.
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/4
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
TO-251
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse) ...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse).............................................................................................................. 200 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=100uA
BVCEO 400 - - V IC=10mA
BVEBO 6 - - V IE=10uA
ICBO - - 10 uA VCB=600V
ICEO - - 10 uA VCE=400V
IEBO - - 10 uA VEB=6V
*VCE(sat)1 - - 400 mV IC=100mA, IB=20mA
*VCE(sat)2 - - 800 mV IC=300mA, IB=60mA
*VBE(sat) - - 1 V IC=100mA, IB=20mA
*hFE1 10 - 40 VCE=10V, IC=0.1A
*hFE2 10 - - VCE=10V, IC=0.5A
tf - - 0.6 uS VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank B1 B2 B3 B4 B5 B6
Range 10-17 13-22 18-27 23-32 28-37 33-40
HLB122I HSMC Product Specification
HI-SINCERITY
V
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 2/4
100
Cur rent Ga in & C o llector Current
75oC125oC
25oC
10
hFE
hFE @ VCE=10
1
1 10 100 1000
10000
1000
Sat urati on Voltage & Collector Current
25oC
Collector Current-IC (mA)
BE(sat)
V
@ IC=5I
B
75oC
10000
1000
100
Saturation Voltage (mV)
10
1
1 10 100 1000
125oC
V
Collector Current-IC (mA)
CE(sat)
ON Vol tage & Collector Current
1000
BE(on)
V
@ VCE=10V
(mV)
BE(on)
Sat urati on Voltage & Collector Current
75oC
@ IC=5I
25oC
B
Saturation Voltage (mV)
100
1 10 100 1000
100
10
Capacitance-Cob ( pF)
1
Capacitan ce & Reverse- B iased Voltage
0.1 1 10 100
125oC
Collector Current-IC (mA)
Reverse- Biased Vol tage (V)
ON Voltage-V
100
1 10 100 1000
10000
1000
100
Collector Cu rren t (mA
10
1
1 10 100 1000
Collector Curren t (mA)
Safe Operati ng Area
PT=1ms
PT=100ms
PT=1s
Forwar d- Biased Vol tage (V)
HLB122I HSMC Product Specification
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