HSMC HLB121J Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121J
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121J is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
•
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 10 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=100uA
BVCEO 400 - 650 V IC=10mA
BVEBO 6 - - V IE=10uA
ICBO - - 10 uA VCB=550V
ICEO - - 10 uA VCB=400V
IEBO - - 10 uA VEB=6V
*VCE(sat)1 - - 400 mV IC=50mA, IB=10mA
*VCE(sat)2 - - 750 mV IC=100mA, IB=20mA
*VBE(sat) - - 1 V IC=50mA, IB=10mA
*hFE1 8 - - VCE=10V, IC=10mA
*hFE2 10 - 36 VCE=10V, IC=50mA
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HLB121J HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 2/3
100
hFE @ VCE=10V
10
hFE
1
1 10 100 1000
Collector Curren t (m A )
On Vol t age & Collector Cur r ent
10000
Dc Current Gai n & Collector Current
100000
Saturation Volt age & Coll ector Cu rrent
10000
1000
BE(sat)
V
Satu r ation Voltage (mV)
100
CE(sat)
V
10
1 10 100 1000
1000
100
Capa cita n ce Reverse-Bi ased Volta ge
Collector Curren t (m A )
@ IC=5I
@ IC=5I
B
B
Cib
1000
Bton @ VCE=10V
On Voltage-Bton
100
0 100 200 300 400 500 600
Collector Curren t (m A )
Switching Time & Collector Current
10
VCC=100V, IC=5IB1=-5I
1
Switch ing Time (us )
B2
Tstg
Tf
Ton
10
Collector Curren t (m A )
Cob
1
0.1 1 10 100
Reverse Biased Volt age ( V)
Safe Operating Area
10000
1000
100
Collector Curren t (m A )
PT=1ms
PT=100ms
PT=1s
0.1
0 100 200 300 400 500 600
Collector Curren t (m A )
10
0 50 100 150 200 250
Forwar d Biased Vol tage (V)
HLB121J HSMC Product Specification
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