HSMC HLB121I Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121I is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
•
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 10 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=100uA
BVCEO 400 - - V IC=10mA
BVEBO 6 - - V IE=10uA
ICBO - - 10 uA VCB=550V
ICEO - - 10 uA VCB=400V
IEBO - - 10 uA VEB=6V
*VCE(sat)1 - - 400 mV IC=50mA, IB=10mA
*VCE(sat)2 - - 750 mV IC=100mA, IB=20mA
*VBE(sat) - - 1 V IC=50mA, IB=10mA
*hFE1 8 - - VCE=10V, IC=10mA
*hFE2 10 - 36 VCE=10V, IC=50mA
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 2/3
100
Dc Current Gai n & Collector Current
hFE @ VCE=10V
10
hFE
1
1 10 100 1000
10000
Collector Curren t ( mA)
On Vol t age & Coll ect or Cur ren t
100000
10000
1000
BE(sat)
V
Satu r ation Voltage ( m V)
100
10
1 10 100 1000
CE(sat)
V
Collector Curren t ( mA)
@ IC=5I
@ IC=5I
B
B
Capacit ance Reverse Biased Voltage
1000
Saturation Voltage & C ollector Current
100
Cib
1000
Bton @ VCE=10V
On Voltage-Bton
100
0 100 200 300 400 500 600
Collector Curren t ( mA)
Switching Time & Collector Current
10
VCC=100V, IC=5IB1=-5I
Ton Tstg
1
Switching Time ( us)
Tf
B2
10
Collector Curren t ( mA)
Cob
1
0.1 1 10 100
10000
1000
100
Collector Curren t ( mA)
Reverse Biased Vol tage (V)
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
0.1
0 100 200 300 400 500 600
Collector Curren t ( mA)
10
0 50 100 150 200 250
Forwar d Biased Vol tage (V)
HSMC Product Specification
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