HSMC HLB120A Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HLB120A
NPN Triple Diffused Planar Type High Voltage Transistors
Description
The HLB120A is a medium power transistor designed for use in
switching applications.
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2002.01.31
Page No. : 1/3
Features
• High Breakdown Voltage
• Low Collector Saturation Voltage
• Fast Switching Speed
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
Total Power Dissipation (Tc=25°C)....................................................................................... 7 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 600 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current (DC)............................................................................................... 100 mA
IC Collector Current (Pulse) ........................................................................................... 200 mA
IB Base Current (DC)....................................................................................................... 20 mA
IB Base Current (Pulse).................................................................................................... 40 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max Unit Test Conditions
BVCBO 600 - - V IC=100uA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 6 - - V IE=10uA,, IC=0
ICBO - - 10 uA VCB=550V
ICEO - - 10 uA VCE=400V, IB=0
IEBO - - 10 uA VEB=6V, IC=0
*VCE(sat)1 - - 400 mV IC=50mA, IB=10mA
*VCE(sat)2 - - 750 mV IC=100mA, IB=20mA
*VBE(sat) - - 1 V IC=50mA, IB=10mA
*hFE1 8 - - VCE=10V, IC=10mA
*hFE2 10 - 36 VCE=10V, IC=50mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HLB120A HSMC Product Specification
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2002.01.31
Page No. : 2/3
100
Current Gain & Collector Current
VCE=10V
10
hFE
1
1 10 100 1000
10000
Sat urati on Voltage & Col lector Current
Collector Current (m A)
10000
1000
100
Saturat ion Volt age ( m V)
10
1 10 100 1000
Collector Current (mA)
CE(sat)
V
@ IC=5I
B
Capacitan ce & R everse- Biased Volta ge
10
Saturat ion Voltage & Coll ector Curr ent
1000
BE(sat)
V
Saturat ion Voltag e ( m V)
100
1 10 100 1000
Collector Current (m A)
Switch ing time & Collector Current
10.00
Tstg
1.00
Tf
Ton
0.10
Switching Time (us)...
VCC=125V, IC=5I
0.01
10 100
B
Collector Current (mA)
@ IC=5I
B
Capacitance (Pf )
1
1 10 100
Reverse Biased Voltage ( V)
Cob
Safe Operati ng Area
1
0.1
PT=1ms
PT=100ms
0.01
Collector Current (mA
0.001
1 10 100 1000
PT=1s
Forwar d Voltage ( V)
HLB120A HSMC Product Specification
Loading...