HSMC HJ882 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HJ882

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HJ882 is designed for using in output stage of 20 W audio amplifier,
voltage regulator, DC-DC converter and relay driver.

Spec. No. : HE6014
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 1/4

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Stora ge Temperature........................................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................................................ +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)................................................................................................. 10 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................................. 40 V

BVCEO Collector to Emitter Voltage............................................................................................... 30 V

BVEBO Emitter to Base Voltage....................................................................................................... 5 V

IC Collector Current (DC)................................................................................................................... 3 A

IC Collector Current (Pulse)............................................................................................................... 7 A

IB Base Current (DC).................................................................................................................. 600 mA

TO-252

Thermal Characteristic

Characteristic Symbol Max Unit

Thermal Resistance, junction to case

Rθjc

12.5

o

C/W

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 40 - - V IC=100uA, IE=0
BVCEO 30 - - V IC=1mA, IB=0
BVEBO 5 - - V I E= 10uA, IC=0

ICBO - - 1 uA VCB=30V, IE=0

IEBO - - 1 uA VEB=3V, IC=0
*VCE(sat) - 0.3 0.5 V IC=2A, IB=0.2A
*VBE(sat) - 1 2 V I C= 2 A, IB=0.2A

*hFE1 30 - - VCE=2V, IC=20mA
*hFE2 160 - 400 VCE=2V, IC=1A

fT - 90 - MHz VCE=5V, IC=0.1A, f=100MHz

Cob - 45 - pF VCB=10V, f=1MHz

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank Q P E

Range 100-200 160-320 250-500

HJ882 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6014
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 2/4

1000

125oC

25oC

100

hFE

hFE @ VCE=2V

10

1 10 100 1000 10000

Collector Current- IC (mA)

75oC

Sat uration Voltage & Collect or Cur rent

1000

Current Gain & Coll ector Curren t

75oC

1000

100

Satur ation Voltage ( m V)

125oC

10

1 10 100 1000 10000

Collector Current- IC (mA)

25oC

CE(sat)

V

@ IC=10I

Sat urati on Voltage & Collector Curren t

1000

Sat urati on Voltage & Col lector Current

75oC

B

75oC

100

125oC

Saturation Voltage (mV)

10

1 10 100 1000 10000

Collector Current- IC (mA)

25oC

CE(sat)

V

@ IC=40I

Sat urati on Voltage & Col lector Current

10000

1000

Saturation Voltage (mV)

100

25oC

125oC

1 10 100 1000 10000

Collector Current- IC (mA)

75oC

BE(sat)

V

@ IC=10I

100

Saturat ion Volt age ( m V)

B

10

1 10 100 1000 10000

125oC

Collector Current- IC (mA)

25oC

CE(sat)

V

@ IC=20I

B

Capacita nce & Reverse-Biased Voltage

100

Capacitance (pF)

Cob

B

10

0.1 1 10 100

Reverse-Biased Vol t a ge ( V)

HJ882 HSMC Product Specification