HSMC HJ6668 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HJ6668

PNP EPITAXIAL PLANAR TRANSIST OR

Description

The HJ6668 is designed for general-purpose amplifier and switching
applications.

Spec. No. : Preliminary Data
Issued Date : 1999.03.01
Revised Date : 2000.11.01
Page No. : 1/3

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Tc=25°C) .................................................................................... 65 W

Maximum Voltages and Currents

•

BVCBO Collector to Base Voltage..................................................................................... -80 V

BVCEO Collector to Emitter Voltage.................................................................................. -80 V

BVEBO Emitter to Base Voltage.......................................................................................... -5 V

IC Collector Current........................................................................................................... -10 A

Characteristics

Symbol Min. Typ. Max. Unit Test Co nditions

BVCBO -80 - - V IC=-10mA
BVCEO -80 - - V IC=-200mA

IEBO - - -100 mA VEB=-5V
ICEO - - -1 mA VCE=-80V

ICEV - - -300 uA VCE=-80V, VBE(off)=-1.5V
*VCE(sat)1 - - -2 V IC=-5A, IB=-10mA
*VCE(sat)2 - - -3 V IC=-10A, IB=-100mA

*VBE(on)1 - - -2.8 V IC=-5A, VCE=-3V
*VBE(on)2 - - -4.5 V IC=-10A, VCE=-3V

*hFE1 1 - 20 K IC=-5A, VCE=-3V
*hFE2 100 - - IC=-10A, VCE=-3V

(Ta=25°C)

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : Preliminary Data
Issued Date : 1999.03.01
Revised Date : 2000.11.01
Page No. : 2/3

10000

1000

100

hFE

10

1

1 10 100 1000 10000

Current Gain & Collector Current

hFE @ VCE=3V

Collector Current (mA)

On Vol t age & Collector Cur rent

10000

10000

1000

Saturation Voltage (mV)

100

Saturation Volt age & Coll ector Current

BE(sat)

V

@ IC=100I

CE(sat)

V

@ IC=100I

10 100 1000 10000

Collector Current (mA)

Switching Time & Collector Current

10

VCC=30V, IC=250IB1=-250I

B2

B

B

1000

On Voltage (mV)

100

10 100 1000 10000

1000

100

Capac itanc e (pF)

Capacitance & Reverse-Biased Voltage

Collector Curren t (m A )

BE(on)

V

@ VCE=3V

Cob

Tstg

1

Tf

Switchin g T imes ( us)

0.1
110

Ton

Collector Current (A)

10

0.1 1 10 100

Reverse-Biased Vol t ag e ( V)

HSMC Product Specification