HSMC HJ3055 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HJ3055
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ3055 is designed for general purpose of amplifier and
switching applications.
Spec. No. : HE6004-B
Issued Date : 1994.10.04
Revised Date : 2000.11.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current ........................................................................................................... 10 A
IB Base Current.................................................................................................................... 6 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 70 - - V IC=30mA, IE=0
BVCEO 60 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=1mA, IC=0
ICBO - - 20 uA VCB=70V, IE=0
ICEX - - 20 uA VCE=70V, VEB(off)=1.5V
ICEO - - 50 uA VCE=30V, IB=0
IEBO - - 0.5 mA VEB=5V, IC=0
*VCE(sat)1 - - 1.1 V IC=4A, IB=400mA
*VCE(sat)2 - - 8 V IC=10A, IB=3.3A
*VBE(on) - - 1.8 V VCE=4V, IC=4A
*hFE1 20 - 100 VCE=4V, IC=4A
*hFE2 5 - - VCE=4V, IC=10A
fT 2 - - MHz VCE=10V, IC=500mA, f=1MHz
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6004-B
Issued Date : 1994.10.04
Revised Date : 2000.11.01
Page No. : 2/3
100
Current Gain & Collector Current
hFE @ VCE=4V
hFE
10
1 10 100 1000 10000
Collector Current (mA)
On Vol t age & Coll ect or Current
10000
10000
1000
100
Saturation Voltage (mV)
10
Saturation Voltage & Collect or Cu rr ent
BE(sat)
V
CE(sat)
V
1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Switching Time & Collector Current
10
1
Tstg
1000
On Voltage (mV)
100
1 10 100 1000 10000
1000
100
Capac itance (pF)
Capacit ance & Reverse- Bia sed Voltage
BE(on)
V
@ VCE=4V
Collector Curren t ( mA)
Cob
Ton
0.1
Switchin g T imes ( us)
Tf
0.01
0.1 1.0 10.0
Collector Current (A)
10
0.1 1 10 100
Reverse- Biased Vol tage (V)
HSMC Product Specification
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