HSMC HJ127 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HJ127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
• High DC current gain
• Built-in a damper diode at E-C
Spec. No. : HE6017
Issued Date : 1996.04.12
Revised Date : 2003.01.17
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage............................................................................................... -100 V
BVCEO Collector to Emitter Voltage............................................................................................ -100 V
BVEBO Emitter to Base Voltage...................................................................................................... -5 V
IC Collector Current......................................................................................................................... -5 A
TO-252
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA, IE=0
BVCEO -100 - - V IC=-30mA, IB=0
BVEBO -5 - - V IE=-1mA, IC=0
ICBO - - -10 uA VCB=-100V, IE=0
IEBO - - -2 mA VEB=-5V, IC=0
ICEX - - -10 uA VCE=-100V, VBE(off)=-1.5V
*VCE(sat)1 - - -2 V IC=-4A, IB=-16 mA
*VCE(sat)2 - - -4 V IC=-8A, IB=-80 mA
*VBE(sat) - - -4.5 V IC=-8A, IB=-80mA
*VBE(on) - - -2.8 V VCE=-4V, IC=-4A
*hFE1 1 - 12 K VCE= - 4 V, IC=-4A
*hFE2 100 - - VCE=-4V, IC=-8A
Cob - - 300 pF VCB=-10V, f=0.1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HJ127 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6017
Issued Date : 1996.04.12
Revised Date : 2003.01.17
Page No. : 2/3
10000
1000
hFE @ VCE=4V
100
hFE
10
1
1 10 100 1000 10000
Collector Current (mA)
On Voltage & Coll ector Current
10000
Curren t Ga in & C ollector Cu rrent
10000
BE(sat)
V
CE(sat)
V
@ IC=100I
@ IC=100I
1000
Satu r ation Vol tage (m V)
100
10 100 1000 10000
Collector Current (m A)
B
B
Switchin g Time & Col lector Current
Sat urat ion Vol tage & Collect or Cu rrent
10
VCC=30V, IC=250IB1=-250I
B2
1000
On Vo ltag e ( mV)
100
1 10 100 1000 10000
Collector Current (mA)
BE(on)
V
@ VCE=4V
Capa citance & Rev er se- B i ased Voltage
1000
100
Capacitan c e ( pF)
Cob
Tstg
1
Tf
Switching T imes ( us)
0.1
110
Ton
Collector Current (A)
Safe Operating Ar ea
100000
PT=1ms
10000
(mA)
C
1000
Collector Current-I
100
10
PT=100ms
PT=1s
10
0.1 1 10 100
Reverse- Biased Vol t a ge ( V)
1
1 10 100
Forwar d Voltage- VCE (V)
HJ127 HSMC Product Specification
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