HSMC HJ122 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HJ122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ122 is designed for use in general purposes and low speed
switching applications.
Spec. No. : HE6009
Issued Date : 1996.02.03
Revised Date : 2002.08.13
Page No. : 1/4
Features
• High DC current gain
• Built-in a damper diode at E-C
TO-252
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA
BVCEO 100 - - V IC=30mA
BVEBO 5 - - V IE=1mA
ICBO - - 10 uA VCB=100V
ICEO - - 10 uA VCE=50V
IEBO - - 2 mA VEB=5V
*VCE(sat)1 - - 2 V IC=4A, IB=16mA
*VCE(sat)2 - - 4 V IC=8A, IB=80mA
*VBE(sat) - - 4.5 V IC=8A, IB=80mA
*VBE(on) - - 2.8 V VCE=4V, IC=4A
*hFE1 1 - 12 K VCE=4V, IC=4A
*hFE2 100 - - VCE=4V, IC=8A
Cob - - 200 pF VCB=10V
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HJ122 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6009
Issued Date : 1996.02.03
Revised Date : 2002.08.13
Page No. : 2/4
10000
1000
hFE @ VCE=4V
100
hFE
10
1
1 10 100 1000 10000
Collect o r Current ( mA)
On Voltage & C ollector Current
10000
Cur rent Gain & Col l ect or Current
10000
BE(sat)
V
1000
Saturation Voltage (mV)
100
100 1000 10000
@ IC=100I
CE(sat)
V
@ IC=100I
Collector Current ( m A )
B
B
Swi tchi ng Time & Col lector Current
Sat urati on Voltage & Collector Cu rrent
10
VCC=30V, IC=250IB1=-250I
B2
Tstg
1000
On Voltage (mV)
100
1 10 100 1000 10000
BE(on)
V
@ VCE=4V
Collector Current ( m A )
Capacitance & Rev erse-Biased Voltage
1000
100
Capacitan ce (pF)
Cob
1
Tf
Switchin g T imes ( us)
0.1
110
Ton
Collector Current ( A)
Safe Operating Area
100000
PT=1ms
10000
(mA)
C
1000
100
Collector Current- I
PT=100ms
PT=1s
10
10
0.1 1 10 100
Reverse-Biased Vol t a ge ( V)
1
1 10 100
Forward-VCE (V)
HJ122 HSMC Product Specification
Loading...