HSMC HJ117 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6031
Issued Date : 1998.02.01
Revised Date : 2001.09.14
Page No. : 1/3
HJ117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ117 is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................................. -100 V
BVCEO Collector to Emitter Voltage............................................................................................... -100 V
BVEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current (Continue) .......................................................................................................... -4 A
IC Collector Current (Peak) ................................................................................................................ -6 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA
BVCEO -100 - - V IC=-30mA
ICBO - - -1 mA VCB=-100V
ICEO - - -2 mA VCE=-50V
IEBO - - -2 mA VEB=-5V
*VCE(sat) - - -2.5 V IC=-2A, IB=-8mA
*VBE(on) - - -2.8 V IC=-2A, VCE=-4V
*hFE1 1 - - K IC=-1A, VCE=-4V
*hFE2 500 - - IC=-2A, VCE=-4V
Cob - - 200 pF VCB=-10V, f=0.1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HJ117 HSMC Product Specification
HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6031
Issued Date : 1998.02.01
Revised Date : 2001.09.14
Page No. : 2/3
10000
hFE @ VCE=3
1000
hFE @ VCE=4V
100
hFE
10
1
1 10 100 1000 10000
Collect or Cur rent-IC (mA)
Saturation Voltage & Collector Current
10000
Current Gain & Collector Current
1000
BE(sat)
V
@ IC=250I
B
BE(sat)
V
@ IC=100I
100000
10000
CE(sat)
V
@ IC=100I
1000
Satu r a tion Volta g e ( mV)
100
100 1000 10000
Col lector Cur rent-IC (mA)
B
CE(sat)
V
@ IC=250I
B
On V oltage & C o llector C urre nt
10000
BE(on)
V
@ VCE=3V
Satur ation Voltage & Collector Curre nt
B
1000
BE(on)
V
@ VCE=4V
On Voltage (mV)
Satu r a tion Volta g e ( mV)
100
100 1000 10000
Collect or Cur rent-IC (mA)
Switching Time & Collector Current
10
VCC=30V, IC=250IB1=-250I
1
Swit c hin g Time ( us)
0.1
110
B2
Tstg
Tf
Ton
Collecto r Cur rent (A)
100
1 10 100 1000 10000
1000
100
Capac itanc e ( p F )
10
Capacitance & Reverse-Biased Voltage
0.1 1 10 100
Collect or Cur rent-IC (mA)
Rev e r se-Biased Voltage (V)
Cob
HJ117 HSMC Product Specification
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