HSMC HJ112 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HJ112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ112 is designed for use in general purpose amplifier and lowspeed switching applications.
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 100 V
VCEO Collector to Emitter Voltage.................................................................................... 100 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current .............................................................................................................. 4 A
TO-252
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA
BVCEO 100 - - V IC=30mA
ICBO - - 10 uA VCB=80V
ICEO - - 20 uA VCE=50V
IEBO - - 2 mA
*VCE(sat)1 - - 2.5 V IC=2A, IB=8mA
*VBE(on) - - 2.8 V IC=2A, VCE=3V
*hFE1 500 - - IC=0.5A, VCE=3V
*hFE2 1 - 12 K IC=2A, VCE=3V
*hFE3 200 - - IC=4A, VCE=3V
Cob - - 100 pF VCB=10V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HJ112 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 2/4
10000
125oC
1000
75oC
100
hFE
25oC
10
hFE @ VCE=4V
1
1 10 100 1000 10000
Collect o r Current IC (mA)
Sat urati on Voltage & Collector Curren t
10000
Current Gain & Collector Current
10000
125oC
1000
75oC
100
hFE
25oC
10
hFE @ VCE=3V
1
1 10 100 1000 10000
Collector Current IC (mA)
Sat uration Voltage & Collector Current
10000
Current Gain & Collector Current
1000
Saturat ion Voltag e ( m V)
100
100 1000 10000
25oC
125oC
Collect o r Current IC (mA)
CE(sat)
V
75oC
@ IC=100I
Sat uration Voltage & Collector Current
10000
25oC
1000
Saturation Voltage (mV)
125oC 75oC
V
BE(sat)
@ IC=250I
1000
Saturat ion Voltag e ( m V)
B
100
100 1000 10000
25oC
125oC
Collect o r Current IC (mA)
75oC
CE(sat)
V
@ IC=250I
B
ON Voltage & Collcetor Current
10000
25oC
1000
125oC
ON Voltage ( m V)
B
75oC
BE(ON)
V
@ VCE=4V
100
100 1000 10000
Collect o r Current IC (mA)
100
100 1000 10000
Collect o r Current IC (mA)
HJ112 HSMC Product Specification
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