HSMC HIRF630 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5
HIRF630
N - Channel MOSFETs
Description
Dynamic dv / dt Rating
Repetitive Avalanche Rated
•
Fast Switching
•
Ease of Paralleling
•
Simple Drive Requirements
•
This N - Channel MOSFETs provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
Maximum Temperatures
•
(Ta=25°C)
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 74 W
Maximum Voltages and Currents (Tc=25°C)
•
Drain To Source Breakdown Voltage................................................................................ 200 V
Gate To Source Voltage................................................................................................... ± 20 V
Continuous Source Current.................................................................................................. 9 A
Pulsed Drain Current.......................................................................................................... 36 A
Characteristics
(Ta=25°C)
Symbol Parameter Max. Units
ID Tc=25°C
Continuous Drain Current, VGS at 10V 9 A
EAS Single Pulse Aval anche Ener g y (1) 250 mJ
IAR Avalanche Current (2) 9 A
EAR Repetitive Avalanche Energy (2) 7.4 mJ
dv / dt Peak Diode Recovery dv / dt (3) 5 V / ns
Note : VDD=50V, starting TJ=25°C, L=4.6mH, RQ=25Ω, IAS=9A
Repetitive rating; width limited by max. Junction temperature. I
≤
9A, di/dt≤120A / us, V
SD
DD
≤
V
(BR)DSS
, T
≤
150°C
J
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RθJC
RθCS
RθJA
Junction to Case - - 1.7
Case to Sink, Flat, Greased Surface - 0.5 Junction to Ambient - - 62
HSMC Product Specification
C/W
°
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25°C)
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
V(BR)DSS 200 - - V ID=100uA
VGS(th) 2 - 4 V VDS=4V, ID=250uA
IDSS - - 25 uA VDS=200V
IGSS - - 100 nA VGS=20V
IGSS - - -100 nA VGS=-20V
Qg - - 40 nC ID=10A
Qgs - - 8 nC VDS=200V
Qgd - - 10 nC VGS=10V
ton - 200 - nS VDD=100V
td(off) - 90 - nS ID=5A
tf - 6 0 - nS VGS=10V
VDS(on) - - 2 V ID=5.0A, VG = 10V
ID(on) 9 - - A VDS=10V, VGS=10V
RDS(on) - - 0.4
Ciss - 800 - pF VGS=0V
Coss - 240 - pF VDS=25V
Crss - 90 - pF f=1MHz
Ω
VGS=10V, ID = 5.4A
Spec. No. : HE6732-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 2/5
HSMC Product Specification
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