HSMC HI44H11 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HI44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI44H11 is designed for various specific and general purpose
applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Spec. No. : HE9305-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
Maximum Voltages and Currents
•
BVCEO Collector to Base Voltage...................................................................................... 80 V
BVCES Collector to Emitter Voltage ................................................................................... 80 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current............................................................................................................ 10 A
IB Base Current.................................................................................................................... 5 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCEO 80 - - V IC=30mA, IB=0
BVCES 80 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=80V, VEB=0
IEBO - - 50 uA VEB=5V, IC=0
*VCE(sat) - - 1 V IC=8A, IB=0.4A
*VBE(sat) - - 1.5 V IC=8A, IB=0.8A
*hFE1 60 - - VCE=1V, IC=2A
*hFE2 40 - - VCE=1V, IC=4A
Cob - 130 - pF VCB=10V, f=1MHz
fT - 50 - MHz VCE=10V, IC=500mA, f=20MHz
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9305-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 2/3
1000
100
hFE
10
100 1000 10000
10000
Current Gain & Collector Curren t
VCE=1V
Collector Curren t ( mA)
Saturation Voltage & Collect or Cu rr ent
1000
100
CE(sat)
V
Saturation Voltage (mV)
10
10 100 1000 10000
Collector Current (mA)
@ IC=20I
B
Capacit ance & Reverse- Bia s ed Voltage
1000
Saturation Voltage & Collect or Cu rr ent
1000
BE(sat)
V
Saturation Voltage (mV)
100
100 1000 10000
Collector Current (mA)
@ IC=10I
B
100
Capacitance (Pf)
10
1 10 100
Reverse Biased Vol tage (V)
Cob
HSMC Product Specification
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