HSMC HI3669 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HI3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI3669 is designed for using in power amplifier applications,
power switching application.
Spec. No. : HE9029-B
Issued Date : 1997.11.14
Revised Date : 2000.11.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Tstg Storage Temperature .................................................................................... -55 ~ +150 °C
Tj Junction Temperature................................................................................................ +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)................................................................................. 1.25 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Breakdown Voltage................................................................... 80 V
BVCEO Collector to Emitter Breakdown Voltage................................................................ 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage............................................................ 5 V
IC Collector Current (DC)...................................................................................................... 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 80 - - V IC=100uA
BVCEO 80 - - V IC=10mA
BVEBO 5 - - V IE=100uA
ICBO - - 1000 nA VCB=80V
IEBO - - 1000 nA VEB=5V
*VCE(sat) - 0.15 0.5 V IC=1A, IB=50mA
*VBE(sat) - 0.9 1.2 V IC=1A, IB=50mA
*hFE 300 - - VCE=2V, IC=500mA
fT - 100 - MHz VCE=2V, IC=500mA
Cob - 30 - pF VCB=10V, f=1MHz
Ton - 0.2 - uS
Tstg - 1.0 - uS
Tf - 0.2 - uS
(Ta=25°C)
(Ta=25°C)
IB1=-IB2=50mA, Duty Cycle≤1%
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9029-B
Issued Date : 1997.11.14
Revised Date : 2000.11.01
Page No. : 2/3
10000
1000
100
hFE
10
1
0.1 1 10 100 1000 10000
10000
Current Gain & Collector Current
VCE=10V
Collector Curren t ( mA)
Saturation Voltag e & Collector Current
100000
10000
1000
Satu r ation Vol tage (m V)
100
CE(s at)
V
10
0.1 1 10 100 1000 10000
Collector Curren t ( mA)
Capacitance & Reverse-Biased Voltage
100.0
Saturation Voltage & Collector Curr ent
@ IC=20I
B
1000
BE(sat)
Satu r ation Vol tage (m V)
100
0 1 10 100 1000 10000
V
Collector Curren t ( mA)
@ IC=20I
B
Safe Operatin g Area
100000
10000
1000
100
Collector Curren t ( mA)
10
PT=1ms
PT=100ms
PT=1s
10.0
Capac itance (pF)
1.0
0.1 1.0 10.0 100.0
Reverse Biased Vol t age ( V)
Cob
1
1 10 100 1000
Forwar d Vol tage (V)
HSMC Product Specification
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