HSMC HI3055 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HI3055

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HI3055 is designed for general purpose of amplifier and
switching applications.

Spec. No. : HE9004
Issued Date : 1994.01.25
Revised Date : 2001.05.31
Page No. : 1/2

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................................... +150 °C

Maximum Power Dissipation

•

Total Power Dissipation (Tc=25°C) ..................................................................................... 20W

Maximum Voltages and Currents

•

BVCBO Collector to Base Voltage...................................................................................... 70 V

BVCEO Collector to Emitter Voltage................................................................................... 60 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

IC Collector Current............................................................................................................ 10 A

IB Base Current.................................................................................................................... 6 A

Characteristics

Symbol Min. Typ. Max. Unit Test Co nditions

BVCBO 70 - - V IC=200mA, IE=0
BVCEO 60 - - V IC=10mA, IB=0
BVEBO 5 - - V IE=10mA, IC=0

ICBO - - 20 uA VCB=70V, IE=0

ICEX - - 20 uA VCE=70V, VEB(off)=1.5V
ICEO - - 50 uA VCE=30V, IB=0
IEBO - - 0.5 mA VEB=5V, IC=0

*VCE(sat)1 - - 1.1 V IC=4A, IB=400mA
*VCE(sat)2 - - 8 V IC=10A, IB=3.3A

*VBE(on) - - 1.8 V VCE=4V, IC=4A

*hFE1 20 - 100 VCE=4V, IC=4A
*hFE2 5 - - VCE=4V, IC=10A

fT 2 - - MHz VCE=10V, IC=500mA, f=1MHz

(Ta=25°C)

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HI3055 HSMC Product Specification

HI-SINCERITY

g

MICROELECTRONICS CORP.

TO-251 Dimension

Spec. No. : HE9004
Issued Date : 1994.01.25
Revised Date : 2001.05.31
Page No. : 2/2

A

C

B

HSMC Logo

D

Part Number

Date Code

Product Series

Rank

Ink Mark

F G

Style : Pin 1.Base 2.Collector 3.Emitter

3

I

Marking :

E

K

2

H

1

J

3-Lead TO-251 Plastic Package

DIM

HSMC Packa

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

e Code : I

DIM

Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.2559 - 6.50 ­B 0.0354 0.0591 0.90 1.50 H - *0.1811 - *4.60
C 0.0177 0.0236 0.45 0.60 I - 0.0354 - 0.90
D 0.0866 0.0945 2.20 2.40 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2677 0.2835 6.80 7.20

Notes :

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

1.Dimension and tolerance based on our Spec. dated May. 24,1995.

2.Controlling dimension : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, please contact your l ocal HSMC sales office.

*:Typical

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

•

HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.

Head Office And Factory :

•

Head Office

Tel : [phone] Fax : [phone]

•

Factory 1 :

Tel : [phone]~5 Fax : [phone]

HI3055 HSMC Product Specification

(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.

No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C