HSMC HI13003 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9034
Issued Date : 1999.03.17
Revised Date : 2002.05.08
Page No. : 1/3
HI13003
NPN EPITAXIAL PLANAR TRANSISTOR
Description
These devices are designed for high-voltage, high-speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220V switchmode appl i ca ti ons such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
TO-251
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 40 W
Total Power Dissipation (Ta=25°C).................................................................................... 1.3 W
• Maximum Voltages and Currents (Ta=25°C)
BVCEV Collector to Emitter Voltage.................................................................................. 700 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 9 V
IC Collector Current ........................................................................................................... 1.5 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCEO 400 - - V IC=10mA
BVCEV 700 - - V IC=1mA, VBE(OFF)= 1.5 V
IEBO - - 1 mA VEB=9V
ICEV - - 1 mA VCE=700V, VBE(OFF)=1.5V
*VCE(sat)1 - - 0.5 V IC=0.5A, IB=0.1A
*VCE(sat)2 - - 1 V IC=1A, IB=0.25A
*VCE(sat)3 - - 3 V IC=1.5A, IB=0.5A
*VBE(sat)1 - - 1 V IC=0.5A, IB=0.1A
*VBE(sat)2 - - 1.2 V IC=1A, IB=0.25A
*hFE1 8 - 40 IC=0.5A, VCE=2V
*hFE2 5 - 25 VCE=2V, IC=1A
Cob - 21 - pF VCB=10V, IE=0, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HI13003 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9034
Issued Date : 1999.03.17
Revised Date : 2002.05.08
Page No. : 2/3
100
Cur rent G ain & C o llector Current
75oC125oC
25oC
10
hFE
hFE @ VCE=2V
1
0.1 1 10 100 1000 10000
10000
1000
Collector Current-IC (mA)
Sat urati on Voltage & Collector Curren t
CE(sat)
V
@ IC=4I
B
1000
CE(sat)
V
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
B
@ IC=3I
125oC
25oC
Collector Current- IC (mA)
Sat uration Voltage & Collect or Cur rent
10000
Sat urati on Voltage & Collector Current
1000
CE(sat)
V
@ IC=5I
B
75oC
75oC
100
125oC
Saturat ion Volta ge ( m V)
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
Sat ura tion Voltage & C ollector C urrent
10000
1000
Saturation Voltage (mV)
BE(sat)
V
@ IC=4I
25oC
125oC
B
75oC
75oC
125oC
100
Saturation Vpltage (mV)
10
1 10 100 1000 10000
Collector Current-IC (mA)
25oC
Sat uration Voltage & Collector Current
10000
Satur ation Voltage ( m V)
1000
BE(sat)
V
@ IC=5I
25oC
125oC
B
75oC
100
1 10 100 1000 10000
Collector Current-IC (mA)
100
1 10 100 1000 10000
Collector Current- IC (mA)
HI13003 HSMC Product Specification
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