HSMC HI127 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HI127
PNP EPITAXIAL PLANAR TRANSIST OR
Description
High DC current gain
•
Bult-in a damper diode at E-C
•
Spec. No. : HE9017-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) ..................................................................................... 20W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -8 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA, IE=0
BVCEO -100 - - V IC=-30mA, IB=0
BVEBO -5 - - V IE=-1mA, IC=0
ICBO - - -10 uA VCB=-100V, IE=0
IEBO - - -2 mA VEB=-5V, IC=0
ICEX - - -10 uA VCE=-100V, VBE(off)=-1.5V
*VCE(sat)1 - - -2 V IC=-4A, IB=-16mA
*VCE(sat)2 - - -4 V IC=-8A, IB=-80mA
*VBE(sat) - - -4.5 V IC=-8A, IB=-80mA
*VBE(on) - - -2.8 V VCE=-4V, IC=-4A
*hFE1 1 - 12 K VCE=-4V, IC=-4A
*hFE2 100 - - VCE=-4V, IC=-8A
Cob - - 300 pF VCB=-10V, f=0.1MHz
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9017-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 2/3
10000
VCE=4V
1000
hFE
100
0.1 1 10
Collector Curren t (A)
On Vol t ages
10
VBE @ IC/IB=250
Dc Current Gain
Tj=25ºC
10
Collector-Emitter Voltage (V)
1
0.1 1 10 100
Collector Saturation Regi on
Tj=25ºC
IC=2.0A 4.0A 6.0A
Base Current (mA)
Small Signal Current Gain
10000
1000
Tc=25
CE
V
C
I
=3.0A
=4.0V
1
Voltage ( V)
0.1
0.1 1 10
VBE @ IC/IB=250
Collector Curren t (A)
hFE
100
10
1 10 100 1000
Freque ncy ( KH z)
HSMC Product Specification
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