HSMC HI122 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HI122

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HI122 is designed of general purpose and low speed switching
applications.

Features

High DC current gain

•

Bult-in a damper diode at E-C

•

Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 2000.11.01
Page No. : 1/2

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature.............................................................................................. -55~+150°C

Junction Temperature......................................................................................................+150°C

Maximum Power Dissipation

•

Total Power Dissipation (Tc=25°C) ...................................................................................... 20W

Maximum Voltages and Currents

•

BVCBO Collector to Base Voltage..................................................................................... 100 V

BVCEO Collector to Emitter Voltage.................................................................................. 100 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

IC Collector Current ............................................................................................................. 8 A

Characteristics

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 100 - - V IC=1mA
BVCEO 100 - - V IC=30mA
BVEBO 5 - - V IE=1mA

ICBO - - 10 uA VCB=100V
ICEO - - 10 uA VCE=50V

IEBO - - 2 mA VEB=5V
*VCE(sat)1 - - 2 V IC=4A, IB=16mA
*VCE(sat)2 - - 4 V IC=8A, IB=80mA

*VBE(sat) - - 4.5 V IC=8A, IB=80mA

*VBE(on) - - 2.8 V VCE=4V, IC=4A

*hFE1 1K - 12K VCE=4V, IC=4A
*hFE2 100 - - VCE=4V, IC=8A

Cob - 130 - pF VCB=10V, f=1MHz

(Ta=25°C)

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

HI-SINCERITY

g

MICROELECTRONICS CORP.

TO-251 Dimension

Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 2000.11.01
Page No. : 2/2

A

C

B

HSMC Logo

D

Part Number

Date Code

Product Series

Rank

Ink Mark

F G

Style : Pin 1.Base 2.Collector 3.Emitter

3

I

Marking :

E

K

2

H

1

J

3-Lead TO-251 Plastic Package

DIM

HSMC Packa

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

e Code : I

DIM

Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.2559 - 6.50 ­B 0.0354 0.0591 0.90 1.50 H - *0.1811 - *4.60
C 0.0177 0.0236 0.45 0.60 I - 0.0354 - 0.90
D 0.0866 0.0945 2.20 2.40 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2677 0.2835 6.80 7.20

Notes :

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

1.Dimension and tolerance based on our Spec. dated May. 24,1995.

2.Controlling dimension : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.

*:Typical

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

•

HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.

Head Office And Factory :

•

Head Office

Tel : [phone] Fax : [phone]

•

Factory 1 :

Tel : [phone]~5 Fax : [phone]

•

Factory 2 :

Tel : [phone] Fax : [phone]

(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.

No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

HSMC Product Specification