HSMC HI10387 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HI10387
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI10387 is designed for general-purpose amplifier and lowspeed switching applications.
Spec. No. : HE9028
Issued Date : 1994.01.25
Revised Date : 2001.12.19
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature.............................................................................................. -55~+150 °C
Junction Temperature....................................................................................... 150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 65 W
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ............................................................................................................ 10 A
TO-251
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCEO 80 - - V IC=200mA
ICBO - - 100 uA VCB=160V
IEBO - - 2 mA VEB=5V
ICEO - - 1 mA VCE=80V
ICEV - - 300 uA VCE=80V, VBE(Off)=1.5V
VCE(sat)1 - - 2 V IC=5A, IB=10mA
VCE(sat)2 - - 3 V IC=10A, IB=100mA
VCE(sat)3 - - 1.5 V IC=5A, IB=2.5mA
VBE(sat) - - 2 V IC=5A, IB=5mA
VBE(on)1 - - 2.8 V VCE=3V, IC=5A
VBE(on)2 - - 4.5 V VCE=3V, IC=10A
VFEC - - 3 V IC=5A
hFE1 2 - 20 K IC=5A, VCE=3V
hFE2 100 - - VCE=3V, IC=10A
Classification Of VCE(sat)1
Rank KA KB KC NORMAL
VCE(sat)1 <1.5, BVCEO>130V <1.1V <1.3V <2V
HI10387 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9028
Issued Date : 1994.01.25
Revised Date : 2001.12.19
Page No. : 2/3
10000
1000
hFE @ VCE=3V
100
hFE
10
1
1 10 100 1000 10000
Collector Current (m A)
On Voltage & Collector C urr ent
10000
Current Gain & Collector Current
10000
1000
Saturation Voltage (mV)
100
Sat uration Voltage & Collector Cur rent
BE(sat)
V
@ IC=100I
100 1000 10000
Collector Current (m A)
B
CE(sat)
V
@ IC=100I
Switching Time & Collector Current
10
VCC=30 V, IC=250IB1=-250I
B2
Tstg
B
1000
On Voltage (mV)
100
10 100 1000 10000
BE(on)
V
@ VCE=3V
Collect o r Current ( mA)
Capacitance & Rev erse-Biased Voltage
1000
100
Capacitan c e ( pF)
Cob
1
Tf
Switching T imes ( us)
0.1
110
Ton
Collector Current ( A)
Safe Operating Area
10000
1000
100
Collector Current (m A)
PT=100ms
PT=1s
10
PT=1ms
10
0.1 1 10 100
Rev e r se-Biased Voltage ( V)
1
1 10 100
Forwar d Voltage (V)
HI10387 HSMC Product Specification
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