HSMC HE8551S Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6119
Issued Date : 1992.11.25
Revised Date : 2001.07.19
Page No. : 1/4
HE8551S
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The HE8551S is designed for gen er al purp ose amplifier applications.
Features
High DC Current gain: 100-400 at IC=150mA
•
Complementary to HE8051S
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage .................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -700 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -25 - - V IC=-10uA, IE=0
BVCEO -20 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -1 uA VCB=-20V, IE=0
*VCE(sat) - - -0.5 V IC=-0.5A, IB=-50mA
VBE(on) - - -1 V VCE=-1V, IC=-150mA
*hFE1 100 - 500 VCE=-1V, IC=-150mA
*hFE2 - 100 - VCE=-1V, IC=-500mA
fT 150 - - MHz VCE=-10V, IC=-20mA, f=100MHz
Cob - - 10 PF VCB=-10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank C C1 D D1 E
hFE1 100-180 100-180 160-300 160-300 250-500
hFE2 -
HE8551S HSMC Product Specification
>
100
-
>
100
-
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6119
Issued Date : 1992.11.25
Revised Date : 2001.07.19
Page No. : 2/4
1000
100
hFE
10
1
0.1 1 10 100 1000 10000
10000
Current Gain & Collecto Current
hFE @ VCE=1V
Collector Current (mA)
On Voltage & Collector Current
1000
100
10
Saturation Voltage (mV)
1
100
Saturation Volt age & Coll ector Cu rrent
CE(sat)
V
0.1 1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
B
Capacitance & Reverse-Biased Volt age
1000
On Voltage (mV)
100
1 10 100 1000 10000
BE(on)
V
@ VCE=1V
Collector Current (mA)
Cut off Fr equency & Collector Cu rrent
1000
VCE=10V
100
Cutoff Frequency (MHz)
10
Capac itanc e (pF)
1
0.1 1 10 100
Cob
Reverse-Biased Vol t a ge (V)
Sa fe Operating Area
10000
PT=1ms
PT=100ms
PT=1s
100
10
(mA)
C
Collector Current-I
1000
10
1 10 100 1000
Collector Current (mA)
1
1 10 100
Forwar d Voltage-VCE (V)
HE8551S HSMC Product Specification
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