HSMC HE8550S, HE8550 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6114
Issued Date : 1992.09.30
Revised Date : 2001.08.13
Page No. : 1/3

HE8550

PNP EPITAXIAL PLANAR TRANSIST OR

Description

The HE8550 is designed for use in 2W output amplifier of portable
radios in class B push-pull operation.

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Ta=25°C)...................................................................................... 1 W

Maximum Voltages and Currents (Ta=25°C)

•

VCBO Collector to Base Voltage ....................................................................................... -40 V

VCEO Collector to Emitter Voltage .................................................................................... -25 V

VEBO Emitter to Base Voltage ............................................................................................ -6 V

IC Collector Current ......................................................................................................... -1.5 A

IB Base Current................................................................................................................ -0.5 A

Characteristics

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO -40 - - V IC=-100uA, IE=0
BVCEO -25 - - V IC=-2mA, IB=0
BVEBO -6 - - V IE=-100uA, IC=0

ICBO - - -100 nA VCB=-35V, IE=0

IEBO - - -100 nA VEB=-6V, IC=0
*VCE(sat) - - -0.5 V IC=-0.8A, IB=-80mA
*VBE(sat) - - -1.2 V IC=-0.8A, IB=-80mA

VBE(on) - - -1 V VCE=-1V, IC=-10mA

*hFE1 45 - - VCE=-1V, IC=-5mA
*hFE2 85 - 500 VCE=-1V, IC=-100mA
*hFE3 40 - - VCE=-1V, IC=-800mA

fT 100 - - MHz VCE=-10V, IC=-50mA, f=100MHz

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE2

Rank B C D E

Range 85-160 120-200 160-320 250-500

HE8550 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6114
Issued Date : 1992.09.30
Revised Date : 2001.08.13
Page No. : 2/3

1000

Current Gai n & Collector Current

VCE=1V

100

hFE

10

0.1 1 10 100 1000 10000

10000

Collector Curren t (m A )

On Vol t age & Collector Cur rent

10000

Saturation Volt age & Coll ector Cu rren t

1000

BE(sat)

V

@ IC=10IB

100

CE(sat)

V

@ IC=10I

Satu r ation Voltage (mV)

10

1

0.1 1 10 100 1000 10000

1000

Cut o ff Fr equency & Collect or Current

Collector Curren t (m )

VCE=10V

B

1000

BE(on)

V

On Voltage (mV)

100

1 10 100 1000 10000

100

10

Capac itanc e (pF)

Capcitance & Reverse-Bia sed Voltage

Collector Curren t (m A )

Cob

@ VCE=1V

100

Cutoff Frequency (MHz)

10

1 10 100 1000

10000

1000

(mA)

C

100

Collector Curren t-I

PT=1ms

PT=100ms

PT=1s

10

Collector Curren t (m A )

Safe Operating Area

1

0.1 1 10 100

Reverse-Biased Vol t ag e ( V)

1

1 10 100

Forwar d Vol tage-VCE (V)

HE8550 HSMC Product Specification