HSMC HE8051 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6115-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 1/3
HE8051
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8051 is designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Features
High Total Power Dissipation (PT: 2W, TC=25°C)
•
High Collector Current (IC: 1.5A)
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 40 V
VCEO Collector to Emitter Voltage ..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current........................................................................................................... 1.5 A
IB Base Current.............................................................................................................. 500mA
(Ta=25°C)
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA
BVCEO 25 - - V IC=2mA
BVEBO 6 - - V IE=100uA
ICBO - - 100 nA VCB=35V
IEBO - - 100 nA VEB=6V
*VCE(sat) - - 0.5 V IC=0.8A, IB=80 mA
*VBE(sat) - - 1.2 V IC=0.8A, IB=80mA
VBE(on) - - 1 V VCE=1V, IC=10mA
*hFE1 45 - - VCE=1V, IC=5mA
*hFE2 85 - 500 VCE=1V, IC=100mA
*hFE3 40 - - VCE=1V, IC=800mA
fT 100 - - MHz VCE=10V, IC=50mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank B C D E
Range 85-160 120-200 160-300 250-500
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6115-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000 10000
10000
Current Gain & Collector Current
hFE @ VCE=1V
Collector Current (mA)
On Voltage & Collector Current
10000
1000
100
Saturation Voltage (mV)
10
100.000
Saturation Volt age & Col lector C urren t
BE(sat)
V
CE(sat)
V
@ IC=100I
0.1 1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
B
B
CE(sat)
V
@ IC=10I
Capacit an ce & R everse-Biased Volt age
B
1000
On Vo ltag (mV)
100
0.1 1 10 100 1000 10000
1000
100
Cutoff Frequency (MHz)
Cut off Fr equen cy & Collector Current
BE(on)
V
@ VCE=1V
Collector Current (mA)
VCE=5V
10.000
Cob
Capacitance (pF)
1.000
0.1 1 10 100
Reverse- Biased Vol tage (V)
Sa fe Operati ng Area
10000
1000
(mA)
C
100
Collector Current-I
PT=1ms
PT=100ms
PT=1s
10
10
1 10 100 1000
Collector Current (mA)
1
1 10 100
Forwar d Voltage- VCE (V)
HSMC Product Specification
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