HSMC HE8050S Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6110
Issued Date : 1992.09.30
Revised Date : 2001.07.18
Page No. : 1/4
HE8050S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8050S is designed for gen er al purp ose amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage ........................................................................................ 25 V
VCEO Collector to Emitter Voltage ..................................................................................... 20 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current....................................................................................................... 700 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 25 - - V IC=10uA, IE=0
BVCEO 20 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 1 uA VCB=20V, IE=0
IEBO - - 100 nA VEB=5V, IC=0
*VCE(sat) - - 0.5 V IC=0.5A, IB=50mA
VBE(on) - - 1 V VCE=1V, IC=150mA
*hFE1 100 - 500 VCE=1V, IC=150mA
*hFE2 - 140 - VCE=1V, IC=500mA
fT 150 - - MHz VCE=10V, IC=20mA, f=100MHz
Cob - - 10 pF VCB=10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classifications of hFE
Rank C C1 D D1 E
hFE1 100-180 100-180 160-300 160-300 250-500
hFE2 -
50
>
-
50
>
-
HE8050S HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6110
Issued Date : 1992.09.30
Revised Date : 2001.07.18
Page No. : 2/4
1000
100
hFE
10
0.1 1 10 100 1000
10000
Current Gain & Collector Current
VCE=1V
Collector Curren t (m A )
On Vol t age & Collector Current
1000
100
Satu r ation Volt age (mV)
10
1000
Saturation Voltage & Collector Current
CE(sat)
V
@ IC=10I
0.1 1 10 100 1000
Collector Curren t (m A )
Cutoff Frequency & Collector Current
VCE=10V
B
1000
BE(on)
V
On Voltage (mV)
100
0.1 1 10 100 1000
Collector Curren t (m A )
@ VCE=1V
Capa citance & Reverse- Bi ased Volta ge
100
10
Capac itanc e (pF)
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collector Curren t (m A )
Safe Operating Area
10000
PT=1ms
PT=100ms
PT=1s
(mA)
C
Collector Curren t-I
1000
100
10
1
0.1 1 10 100
Reverse Biased Volt age ( V)
1
1 10 100
Forwar d Vol tage-VCE (V)
HE8050S HSMC Product Specification
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