HSMC HD122 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HD122

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Description

The HD122 is designed for medium power linear and switching
applications.

Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 1/4

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Tc=25°C) .................................................................................... 40 W

Maximum Voltages and Currents

•

BVCBO Collector to Base Voltage.................................................................................... 100 V

BVCEO Collector to Emitter Voltage................................................................................. 100 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

IC Collector Current.............................................................................................................. 4 A

IC Collector Current (Pulse) .............................................................................................. 0.1 A

Electrical Characteristics

Symbol Min. Typ. Max. Unit Test Co nditions

BVCBO 100 - - V IC=1mA

*BVCEO 100 - - V IC=100mA

BVEBO 5 - - V IE=100uA

ICEO - - 2 mA VCE=50V
ICBO - - 1 mA VCB=100V

IEBO - - 2 mA VBE=5V
*VCE(sat)1 - - 2.5 V IC=1.5A, IB=30mA
*VCE(sat)2 - - 2.8 V IC=2A, IB=40mA

*VBE(on) - - 2.5 V IC=3A, VCE=3V

*hFE1 1000 - - IC=0.5A, VCE=3V
*hFE2 1000 - - IC=3A, VCE=3V

(Ta=25°C)

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 2/4

10000

1000

100

hFE

10

1

Collector Gain & Collector Current

25°C hFE @ VCE=4V

-40°C hFE @ VCE=4V

1 10 100 1000 10000

Collector Current-IC (mA)

Sturation Voltage & Collector Current

10000

-40¢XC V

BE(sat)

@ IC=100I

B

10000

CE(sat)

-40°C V

1000

Stu r at ion Voltage (m V)

100

100 1000 10000

@ IC=100I

Collector Current-IC (mA)

B

25°C V

CE(sat)

@ IC=100I

On Voltage & Collector Current

10000

BE(on)

Sturation Voltage & Collector Current

-40¢XC V

@ VCE=4V

B

BE(sat)

1000

Stu r at ion Voltage (m V)

100

100 1000 10000

25¢XC V

Collector Current-IC (mA)

@ IC=100I

B

Switching Time & Collector Current

10

VCC=30V, IC=250, IB1= -250I

Tstg

1

Switchin g T imes ( us)

B2

Tf

Ton

1000

On Voltage (mV)

100

10 100 1000 10000

BE(on)

25¢XC V

Collector Current-IC (mA)

@ VCE=4V

Capacitance & Reverse-Biased Voltage

1000

100

Capac itance (pF)

Cob

0.1
110

Collector Current-IC (A)

10

0.1 1 10 100

Reverse- Biased Vol t a ge (V)

HSMC Product Specification