HSMC HBF4522D Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D is designed for use i n the monit or dy nami c foc us circui t. I t
can be used up to 19" monitor with working frequency as high as
100KHz.
Features
• High Breakdown Voltage
• Low C-E Saturation Voltage
• High Cutoff Frequency
• High Current Gain
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 20 mA
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCEO 550 - - V IC=1mA
BVCBO 550 - - V IC=100uA
BVEBO 7 - - V IE=10uA,
ICBO - - 1 uA VCB=500V
IEBO - - 100 nA VEB=5V
*VCE(sat) - 0.35 0.5 V IC=30mA, IB=3mA
*hFE 100 150 200 VCE=20V, IC=30mA
fT 90 - - MHz VCE=10V, IE=30mA, ftest=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HBF4522D HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 2/3
1000
Current Gain & Col lector Current
125oC
100
hFE
10
1000
25oC
1 10 100
Collector Current - IC (mA)
Sat urati on Voltage & Col lector Current
25oC
75oC
hFE @ VCE=20V
100000
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
1 10 100
B
@ IC=10I
125oC
25oC
Collector Current-IC (mA)
75oC
Capacitance & Reverse- B iased Volta ge
10
Sat ur ation Voltage & Collector C urrent
125oC 75oC
Saturat ion Volta ge ( m V)
100
1 10 100
Collector Current-IC (mA)
BE(sat)
V
@ IC=10I
Cut off Frequ ency & Col l ect or Current
1000
Cutoff Fr equen cy ( M Hz)...
fT @ VCE=10V
Cob
Capacitance (pf)
B
1
0.1 1 10 100
Rev e r se Biased Voltage ( V)
Safe Operati ng Area
(A)
C
Collector Current-I
10
1
0.1
0.01
PT=1ms
PT=100ms
PT=1s
100
1 10 100
Collector Current-IC (mA)
0.001
1 10 100 1000
Forwar d Biased Vol tage (V)
HBF4522D HSMC Product Specification
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