HSMC HBD675 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HBD675
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBD675 is designed for use as output devices in
complementary general purpose amplifier applications.
Spec. No. : HE6619-C
Issued Date : 1994.07.22
Revised Date : 2000.10.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage...................................................................................... 45 V
BVCEO Collector to Emitter Voltage................................................................................... 45 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 4 A
IB Base Current ................................................................................................................ 0.1 A
Electrical Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 45 - - V IC=1mA
BVCEO 45 - - V IC=50mA
BVEBO 5 - - V IE=100uA
ICEO - - 500 uA VCE=25V
ICBO - - 200 uA VCB=45V
IEBO - - 2 mA VBE=5V
*VCE(sat) - - 2.5 V IC=1.5A, IB=30mA
*VBE(on) - - 2.5 V IC=1.5A, VCE=3V
*hFE 750 - - IC=1.5A, VCE=3V
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6619-C
Issued Date : 1994.07.22
Revised Date : 2000.10.01
Page No. : 2/3
10000
1000
hFE
100
100 1000 10000
Current Gain & Collector Current
VCE=3V
Collector Current (mA)
On Voltage & Collector Current
10
10000
1000
CE(sat)
V
@ IC=50I
Saturation Voltage (mV)
100
100 1000 10000
Collector Current (mA)
Capacitance & Reverse- Biased Voltage
1000
100
Satur ation Vol tage & Collect or Current
B
BE(on)
V
1
On Voltage (mV)
0.1
100 1000 10000
100
10
1
Collector Current (A)
0.1
Collector Current (mA)
Safe Operating Area
@ VCE=3V
PT=1 ms
PT=100 ms
PT=1 s
Cob
10
Capacitance (Pf)
1
1 10 100
Reverse Biased Vol t ag e ( V)
0.01
1 10 100 1000
Forwar d Voltage ( V)
HSMC Product Specification
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