HSMC HBD437T Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD437T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD437T is silison epitaxial-base NPN power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary PNP type is HBD438T.
TO-126
Absolute Maximum Ratings (Ta=25°C)
Symbol Parametor Value Unit
VCBO Collector-Base Voltage (IE=0) 45 V
VCES Collector - Emitter Voltage (VBE=0) 45 V
VCEO Collector-Emitter Voltage (IB=0) 45 V
VEBO Emitter-Base Voltage (IC=0) 5 V
IC Collector Current 4 A
ICM
IB Base Current 1 A
PD Total Dissipation at
Tstg Storage Temperature -55 to 150
Tj Max. Operating Junction Temperature 150
Collector Peak Current (t≤10ms)
Tc=25°C
Ta=25°C
7A
25 W
1.5 W
°C
°C
Thermal Data
Rthj-case Thermal Resistance Junction-case Max. 5
Rthj-amb Thermal Resistance Junction-ambient Max. 83
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off Current (IE=0) VCB=45V - - 100 uA
ICES
IEBO Emitter Cut-off Current (IC=0) VEB=5V 1 mA
*VCEO(sus)
*VCE(sat)
*VBE Base-Emitter Voltage
*hFE DC Current Gain
fT Transition Frequency IC=0.25A, VCE=1V 3 - - MHz
Collector Cut-off Current
(VBE=0)
Collector-Emitter Sustaining
Voltage (IB=0)
Collector-Emitter Saturation
Voltage
VCE=45V - - 100 uA
IC=100mA 45 - - V
IC=2A, IB=0.2A - 0.4 0.6 V
IC=10mA,VCE=5V - 0.58 - V
IC=2A, VCE=1V - - 1.2 V
IC=10mA, VCE=5V 30 130 IC=0.5A, VCE=1V 85 140 IC=2A, VCE=1V 40 - -
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
°C/W
°C/W
HBD437T HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 2/3
1000
75oC125oC
25oC
100
hFE
hFE @ VCE=1V
10
1 10 100 1000 10000
Collec tor Curren t IC (mA)
Sat urati on Volta ge & C ol lector C urrent
1000
Current Gain & Collector Current
CE(sat)
V
@ IC=10I
B
1000
125oC
25oC
100
hFE
hFE @ VCE=5V
10
1 10 100 1000 10000
Collec tor Curren t IC (mA)
75oC
On Voltage & Collector Current
10000
BE(on)
V
@ VCE=1V
Current Gain & Collector C urrent
75oC
100
Saturat ion Voltag e ( m V)
10
1 10 100 1000 10000
10
1
(A)
C
0.1
Collector Current-I
Collec tor Curren t IC (mA)
Safe Operati ng Area
25oC
125oC
1000
75oC
25oC
On Voltage ( m V)
125oC
100
1 10 100 1000 10000
Collec tor Curren t IC (mA)
1ms 100ms 1s
0.01
1 10 100
Forward Voltage-VCE (V)
HBD437T HSMC Product Specification
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