HSMC HBC807 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC807 is designed for switching and AF amplifier amplification
suitable for driver stages and low power output stages.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e.......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCES Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -800 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCEO -45 - - V IC=-10mA
BVCES -50 - - V IC=-100uA
BVEBO -5 - - V IE=-100uA
ICES - - -100 nA VCE=-25V
IEBO - - -100 nA VEB=-4V
*VCE(sat) - - -700 mV IC=-500mA, IB=-50mA
VBE(on) - - -1.2 V VCE=-1V, IC=-300mA
*hFE 100 - 630 VCE=-1V, IC=-100mA
fT - 100 - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - - 12 pF VCB=-10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23
Classification Of hFE
Rank 9FA(16) 9FB(25) 9FC(40)
hFE 100-250 160-400 250-630
HBC807 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 2/3
1000
Curr ent Gain & Coll e c tor Current
VCE=1V
100
hFE
10
0.1 1 10 100 1000
10000
Colle cto r Curren t (mA)
On Voltage & Col l e ctor Cu r r ent
1000
100
Saturation Voltage (mV)
10
1 10 100 1000
1000
Saturation Voltage & Coll ector Curren t
V
@ IC=10IB
CE(sat)
Collector Current (mA)
Cutoff Frequency & Coll ector Cu rrent
VCE=5V
1000
On Voltage (mV)
100
100
10
Capacitance (pF)
V
BE(on)
@ VCE=1V
0.1 1 10 100 1000
Collector Current (mA)
Capacitan ce & R e verse- Biased Voltage
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
10
1
PT=100ms
0.1
Collector Current-IC (mA)
0.01
PT=1s
Colle cto r Curren t (mA)
Safe Oper a t ing Area
PT=1ms
1
0.1 1 10 100
Reverse Biased Voltage (V)
0.001
110100
Forward Voltage Vce (V)
HBC807 HSMC Product Specification
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