
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6423-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 1/3
HBC557
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The HBC557 is designed for use in driver stage of audio amplifier
applications.
Features
High Breakdown Voltage: 45V
•
High AC Current Gain: 75-800 at IC=2mA
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 500 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e....................................................................................... -50 V
VCEO Collector to Emitter Voltage .................................................................................... -45 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -50 - - V IC=-100uA
BVCEO -45 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -100 nA VCB=-20V
IEBO - - -1 uA VEB=-5V
VBE(on)1 -600 - -750 mV IC=-2mA, VCE=-5V
VBE(on)2 - - -820 mV IC=-10mA, VCE= -5V
*VCE(sat)1 - - -300 mV IC=-10mA, IB=-1mA
*VCE(sat)2 - - -650 mV IC=-100mA, IB=-10mA
*hFE 75 - 800 VCB=-5V, IC=-2mA
fT - 300 - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - 4.5 - PF VCB=-10V, IE=0, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank A B C Normal
Range 125-260 240-500 420-800 75-260
HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6423-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 2/3
1000
100
hFE
10
1
1 10 100 1000
10
Current Gain & Collector Current
VCE=5V
Collector Current (mA)
On Vol t age & Collector Cur rent
100.000
10.000
1.000
Saturation Voltage (mV)
0.100
0.010
Saturation Volt age & Coll ector Current
CE(sat)
V
1 10 100 1000
Collector Current (mA)
Cut off Fr equency & Collector Cu rrent
1000
100
VCE=5V
@ IC=10I
B
1
BE(on)
V
On Voltage (mV)
0.1
1 10 100 1000
10
Capac itanc e (pF)
Capacitance & Reverse-Biased Volt age
@ VCE=5V
Collector Curren t (m A )
Cob
10
Cutoff Frequency (MHz)
1
1 10 100 1000
Collector Current (mA)
10
1
(mA)
C
0.1
Collector Current-I
Safe Operating Ar ea
PT=1ms
PT=100ms
PT=1s
1
1 10 100
Reverse Biased Volt a ge ( V)
0.01
1 10 100
Forwar d Voltage-VCE (V)
HSMC Product Specification