HSMC HBC548 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HBC548
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC548 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Spec. No. : HA200103
Issued Date : 2001.10.01
Revised Date : 2001.10.23
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 30 - - V IC=100uA
BVCEO 30 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 15 nA VCB=30V
*VCE(sat)1 - 90 250 mV IC=10mA, IB=0.5mA
*VCE(sat)2 - 200 600 mV IC=100mA, IB=5mA
*VBE(sat)1 - 700 - mV IC=10mA, IB=0.5mA
*VBE(sat)2 - 900 - mV IC=100mA, IB=5mA
VBE(on)1 580 - 700 mV VCE=5V, IC=2mA
VBE(on)2 - - 770 mV VCE=5V, IC=10mA
*hFE 110 - 800 VCE=5V, IC=2mA
fT - 300 - MHz VCE=5V, IC=10mA
Cob - 3.5 6 pF VCB=10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
TO-92
Classification Of hFE
Rank A B C
hFE 110-220 200-450 420-800
HBC548 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200103
Issued Date : 2001.10.01
Revised Date : 2001.10.23
Page No. : 2/3
1000
100
Current Gai n-hFE
10
1
0.1 1 10 100 1000
10000
Curren t Gain & Co llector Cu r rent
hFE @ VCE=5V
Colle ctor Current-IC (mA)
On Voltage & Collect or Current
100000
10000
V
@ IC=20I
1000
Saturation Voltage (mV)
100
10
BE(sat)
V
CE(sat)
0.1 1 10 100 1000
B
@ IC=20I
B
Collector Current-IC (mA)
Capacitance & Rev erse- Biased Voltage
10
Saturation Voltage & Collector Cu r rent
1000
V
@ VCE=5V
On Vol tage (mV)
100
0.1 1 10 100 1000
1000
100
Cutoff Frequence (MHz)
BE(on)
Collector Current-IC (mA)
Cutoff Frequency & Collector Cu rrent
VCE=5V
Cob
1
Capacitance (pF)
0.1
0.1 1 10 100
Reverse-Biased Voltage (V)
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
10
110100
Collector Current-IC (mA)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature-Ta (oC)
HBC548 HSMC Product Specification
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