HSMC HBC546 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HBC546

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HBC546 is primarily intended for use in driver stage of audio
amplifiers.

Spec. No. : HE6417
Issued Date : 1992.11.25
Revised Date : 2002.02.18
Page No. : 1/3

Features

• High Breakdown Voltage: 65V

• High DC Current Gain: 110-800 at IC=2mA VCE=5V

TO-92

Absolute Maximum Ratings

• Maximum Temperatures

Stor age Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage......................................................................................... 80 V

VCEO Collector to Emitter Voltage...................................................................................... 65 V

VEBO Emitter to Base Voltage.............................................................................................. 6 V

IC Collector Current ....................................................................................................... 100 mA

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=100uA, IE=0
BVCEO 65 - - V IC=1mA, IB=0
BVEBO 6 - - V IE=10uA, IC=0

ICBO - - 15 nA VCB=30V, IE=0
VBE(on)1 - - 770 mV IC=10mA, VCE=5V
VBE(on)2 580 - 700 mV IC=2mA, VCE=5V

*VCE(sat)1 - - 250 mV IC=10mA, IB=0.5mA
*VCE(sat)2 - - 600 mV IC=100mA, IB=5mA
*VBE(sat)1 - 700 - mV IC=10mA, IB=0.5mA
*VBE(sat)2 - 900 - mV IC=100mA, IB=5mA

*hFE 110 - 800 VCE=5V, IC=2mA

fT - 300 MHz VCE=5V, IC=10mA, f=100MHz

Cob - - 4.5 PF VCB=10V, IE=0, f=1MHz

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

Classification of hFE

Rank A B C

Range 110-220 200-450 420-800

HBC546 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6417
Issued Date : 1992.11.25
Revised Date : 2002.02.18
Page No. : 2/3

1000

Current Gai n & Collector Cu rrent

75oC

125oC

hFE

25oC

hFE @ VCE=5V

100

0.1 1 10 100

1000

Collector Current- IC (mA)

ON Voltage & Collector Current

25oC

1000

Saturation Voltage & Collector Cu rrent

75oC

100

Satur ation Voltage ( m V)

10

1 10 100

10

125oC

25oC

CE(sat)

V

Collector Current- IC (mA)

Capa citance & Reverse- Biased Volt a ge

@ IC=20I

B

125oC

ON Voltage (mV)

100

1 10 100

Collector Current- IC (mA)

75oC

BE(ON)

V

@ VCE=5V

Safe Operating Area

10000

PT=1ms

1000

(mA)

C

Collector Current-I

100

10

PT=100ms

PT=1s

Cob

Capacitance (pF)

1

0.1 1 10 100

Reverse-Biased Vol tage (V)

PD-Ta

700

600

500

400

300

200

Power Dissipation-PD (mW)

100

1

1 10 100

Forwar d Voltage-VCE (V)

0

0 50 100 150 200

Ambient Temper ature- Ta (oC)

HBC546 HSMC Product Specification