HSMC HBAT54S, HBAT54C, HBAT54A Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HBAT54\A\C\S

Description

Silicon Schottky Barrier Double Diodes

Features

Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 1/3

These diodes feature very low turn-on voltage and fast switching.
There is a PN junction guard ring against excessive voltage such as
electronics attic discharges protects these devices.

SOT-23

Absolute Maximum Ratings

• Maximum Temperatures

Stor age Temperature.............................................................................................. -65~+125 °C

Junction Temperature.................................................................................................... +125 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 230 mW

• Maximum Voltages and Currents (Ta=25°C)

Repetitive Peak Reverse Voltage........................................................................................ 30 V

Forward Continuous Current.......................................................................................... 200 mA

Repetitive Peak Forward Current .................................................................................. 300 mA

Surge Forward Current (tp<1s)....................................................................................... 600 mA

Characteristics (Ta=25°C)

Characteristic Symbol Condition Min. Max. Unit

Reverse breakdown Voltage V(BR)R IR=10uA 30 - V

VF(1) IF=0.1mA - 240 mV
VF(2) IF=1mA - 320 mV

Forward Voltage

Reverse Current IR VR=25V - 2.0 uA
Total Capacitance CT VR=1V, f=1MHz - 10 pF

Reverse Recovery Time Trr

VF(3) IF=10mA - 400 mV
VF(4) IF=30mA - 500 mV
VF(5) IF=100mA - 1000 mV

IF=IR=10mA RL=100Ω
measured at IR=1mA

-5nS

HBAT54, HBAT54A, HBAT54C, HBAT 54S HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 2/3

250

200

(mA)

F

150

100

Forward Current-I

50

0

0 200 400 600 800 1000

Forward Curren t & Forward Voltage

Forwar d Voltage-VF (mV)

100

Diode Capacitance-Cd (pF)

Diode Capac itance & Rever se-Biased Voltage

10

1

0.1 1 10 100

Reverse Biased Voltage-VR (V)

HBAT54, HBAT54A, HBAT54C, HBAT 54S HSMC Product Specification