HSMC HBAS16 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HBAS16

HIGH-SPEED SWITCHING DIODE

Description

• The HBAS16 is designed for high-speed switching application in
hybrid thick and thin-film circuits.

Spec. No. : HE6833
Issued Date : 1994.05.27
Revised Date : 2002.10.24
Page No. : 1/3

• The devices is manufactured by the silicon epitaxial planar process
and packed in a plastic surface mount package.

SOT-23

Features

• Small SMD Package (SOT-23)

• Low Forward Voltage

• Fast Reverse Recovery Time

• Small Total Capacitance

Absolute Maximum Ratings

• Maximum Temperatures

Stor age Temperature.............................................................................................. -65~+150 °C

Junction Temperature.................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 200 mW

• Maximum Voltages and Currents (Ta=25°C)

Reverse Voltage.................................................................................................................. 75 V

Repetitive Reverse Voltage ................................................................................................. 85 V

Forward Current............................................................................................................. 250 mA

Repetitive Forward Current ........................................................................................... 500 mA

Forward Surge Current (1ms)................................................................................................ 1 A

Characteristics (Ta=25°C)

Characteristic Symbol Condition Min Max. Unit

Reverse Breakdown Voltage V(BR) IR=100uA 75 - V

VF(1) IF=1mA - 715 MV

Forward Voltage

Reverse Current IR VR=75V - 1 uA
Total Capacitance CT VR=0, f=1MHZ - 2 pF

Reverse Recovery Time Trr

HBAS16 HSMC Product Specification

VF(2) IF=10mA - 855 mV
VF(3) IF=50mA - 1000 mV
VF(4) IF=150mA - 1250 mV

IF=IR=10mA, RL=100Ω,
measured at IR=1mA

-6nS

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6833
Issued Date : 1994.05.27
Revised Date : 2002.10.24
Page No. : 2/3

Forw ard Biased Voltage & Forw ar d C ur rent

450

300

(mA)

F

Current-I

150

0

0 500 1000 1500 2000

Forwar d Biased Voltage- VF (mV)

1

Capacit ance & Rever se-Biased Volt age

Capacitanc e- Cd (pF)

0.1

0.1 1 10 100

Reverse Biased Vol tage-VR (V)

HBAS16 HSMC Product Specification