HSMC HAD826SP Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2000.10.01
Page No. : 1/3
HAD826SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HAD826SP is designed for general purpose amplifier and high speed, medium - power switching
applications.
Features
Low Collector Saturation Voltage
•
High Speed Switching
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................................. 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)........................................................................................... 500 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage..................................................................................................... 75 V
VCEO Collector to Emitter Voltage................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 6 V
IC Collector Current .................................................................................................................. 500 mA
(Ta=25°C)
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 75 - - V IC=10uA, IE=0
BVCEO 40 - - V IC=10mA, IB=0
BVEBO 6 - - V I E= 10uA, IC=0
ICBO - - 10 nA VCB=60V, IE=0
ICEX - - 10 nA VCB=60V, VEB(OFF)=3V
IEBO - - 50 nA VEB=3V, IC=0
*VCE(sat)1 - - 300 mv IC=150mA, IB=15mA
*VCE(sat)2 - - 1 V IC=500mA, IB=50mA
*VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA
*VBE(sat)2 - - 2 V IC=500m A, IB=50mA
*hFE1 35 - - VCE=10V, IC=100uA
*hFE2 50 - - VCE=10V, IC=1mA
*hFE3 75 - - VCE=10V, IC=10mA
*hFE4 100 - 300 VCE=10V, IC=150mA
*hFE5 40 - - VCE=10V, IC=500mA
*hFE6 50 - - VCE=1V, IC=150mA
fT 300 - - MHz VCE=20V, IC=20mA, f =100MHz
Cob - - 8 pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specific at i on
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2000.10.01
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
Current Gain & Collector Current
VCE=10V
VCE=1V
Collec tor Curre nt (m A)
Capacit ance & Reverse-Biased Voltage
100
10000
1000
100
Saturation Voltage (mV)
10
Saturation Voltage & Collector Current
BE(sat)
V
CE(sat)
V
0.1 1 10 100 1000
Collec tor Curre nt (mA)
@ IC=10I
@ IC=10I
B
B
Cutoff Frequency & Collector Current
1000
100
fT
10
Capac itance (pF)
1
0.1 1 10 100 1000
Cob
Reverse Biased Vol tage (V)
10
Cutoff Frequency (MHz)
1
1 10 100 1000
Collec tor Curre nt (m A)
HSMC Product Specific at i on
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