HSMC HAD826 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6411-B
Issued Date : 199.03.06
Revised Date : 2000.09.01
Page No. : 1/3
HAD826
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HAD826 is designed for general purpose amplifier and high
speed, medium-power switching applications.
Features
Low Collector Saturation Voltage
•
High Speed Switching
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature .......................................................................................... -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipations
•
Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage........................................................................................ 75 V
VCEO Collector to Emitter Voltage..................................................................................... 60 V
VEBO Emitter to Base Voltage............................................................................................. 6 V
IC Collector Current....................................................................................................... 600mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 75 - - V IC=10uA, IE=0
BVCEO 60 - - V IC=10mA, IB=0
BVEBO 6 - - V IE=10uA, IC=0
ICBO - - 10 nA VCB=60V, IE=0
ICEX - - 10 nA VCB=60V, VEB(OFF)=3V
IEBO - - 50 nA VEB=3V, IC=0
*VCE(sat)1 - - 300 mV IC=150mA, IB=15mA
*VCE(sat)2 - - 1 V IC=500mA, IB=50mA
*VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA
*VBE(sat)2 - - 2 V IC=500mA, IB=50mA
*hFE1 35 - - VCE=10V, IC=100uA
*hFE2 50 - - VCE=10V, IC=1mA
*hFE3 75 - - VCE=10V, IC=10mA
*hFE4 100 - 300 VCE=10V, IC=150mA
*hFE5 40 - - VCE=10V, IC=500mA
*hFE6 50 - - VCE=1V, IC=150mA
fT 300 - - MHz IC=20mA, VCE=20V, f=100MHz
Cob - - 8 pF VCB=10V, F=1MHz
(Ta=25°C)
HSMC Product Specific at i on
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6411-B
Issued Date : 199.03.06
Revised Date : 2000.09.01
Page No. : 2/3
1000
VCE=10V
100
VCE=1V
Current Gain-hFE
10
1
1 10 100 1000
Collec tor Cur rent-IC (mA)
Cut o ff Fr equenc y & Collector Current
1000
Curr ent Ga in & Collet or Current
100
VCE=20V
10000
1000
BE(sat)@IC
V
100
CE(sat)@IC
Saturation Voltage (mV)
10
1
0.1 1 10 100 1000
V
Collec tor Curre nt -IC ( mA)
=10I
=10I
B
B
Capacit ance & Rever se-Biased Volt age
10
Saturation Voltage & Collector Current
10
Cutoff Frequency (MHz)
1
1 10 100
Collec tor Cur rent-IC (mA)
Safe Operat ing Area
10000
PT=100ms
PT=1ms
PT=1s
1
1 10 100
Forwar d Vol tage-VCE (V)
Collec tor Cur rent-IC (mA)
1000
100
10
Capacitance-(Pf)
1
0.1 1 10 100
Reverse Biased Voltage (V)
Cob
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
0
0 20 40 60 80 100 120 140 160
Ambient Tempe r at ure- Ta(oC)
HSMC Product Specific at i on
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