HSMC HA8550S Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6109
Issued Date : 1997.09.05
Revised Date : 2001.04.27
Page No. : 1/4

HA8550S

PNP EPITAXIAL PLANAR TRANSIST OR

Description

The HA8550S is designed for general purpose amplifier
applications.

Features

High DC Current Gain (hFE=100~500 at IC=150mA)

•

Complementary to HA8050S

•

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Ta=25°C)............................................................................... 625 mW

Maximum Voltages and Currents (Ta=25°C)

•

VCBO Collector to Base Voltag e....................................................................................... -25 V

VCEO Collector to Emitter Voltage ..................................................................................... -20 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current...................................................................................................... -700 mA

Characteristics

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO -25 - - V IC=-10uA
BVCEO -20 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA

ICBO - - -1 uA VCB=-20V

*VCE(sat) - - -0.5 V IC=-0.5A, IB=-50mA

VBE(on) - - -1 V VCE=-1V, IC=-150mA

*hFE1 100 - 500 VCE=-1V, IC=-150mA
*hFE2 - 170 - VCE=-1V, IC=-500mA

FT 150 - - MHz VCE=-10V, IC=-20mA, f=100MHz

Cob - - 10 pF VCB=-10V, f=1MHz

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE

Rank C D E
hFE1 100~200 150~300 250-500

HA8550S HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6109
Issued Date : 1997.09.05
Revised Date : 2001.04.27
Page No. : 2/4

1000

100

hFE

10

1

0.001 0.01 0.1 1 10 100 1000

Collector Current (mA)

VCE=1V

On Voltage & Collector Current

1

BE(ON)

V

@ VCE=1V

Current Gain & Collector Current

Saturation Volt age & Coll ector Current

1

0.1

Saturation Voltage (V)

CE(sat)

V

0.01

0.01 0.1 1 10 100 1000

1000

100

Cut off Fr equency & Collector Cu rrent

B

@ IC=10I

Collector Current (mA)

VCE=10V

On Voltage (V)

0.1

0.01 0.1 1 10 100 1000

100

10

Capac itanc e (pF)

1

Capacitance & Reverse-Biased Volt age

0.1 1 10 100

Collector Curren t (m A )

Cob

Reverse-Biased Vol t a ge (V)

10

Cutoff Frequency (MHz)

1

1 10 100 1000

10000

PT=1ms

PT=100ms

PT=1s

100

10

1

1 10 100

(mA)

C

Collector Current-I

1000

Collector Current (mA)

Sa fe Operating Area

Forwar d Voltage (V)

HA8550S HSMC Product Specification