HSMC HA3669 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HA3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HA3669 is designed for using in power amplifier applications,
power switching application.
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2002.04.18
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Tstg Storage Temperature .................................................................................... -55 ~ +150 °C
Tj Junction Temperature................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 750 mW
• Maximum Voltages and Currents
BVCBO Collector to Base Breakdown Voltage.................................................................... 80 V
BVCEO Collector to Emitter Breakdown Voltage................................................................. 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage............................................................. 5 V
IC Collector Current (DC)...................................................................................................... 2 A
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=100uA
BVCEO 80 - - V IC=10mA
BVEBO 5 - - V IE=100uA
ICBO - - 1000 nA VCB=80V
IEBO - - 1000 nA VEB=5V
*VCE(sat) - 0.15 0.5 V IC=1A, IB=50mA
*VBE(sat) - 0.9 1.2 V IC=1A, IB=50mA
*hFE 240 - - VCE=2V, IC=500mA
fT - 100 - MHz VCE=2V, IC=500mA
Cob - 30 - pF VCB=10V, f=1MHz
Ton - 0.2 - uS
Tstg - 1.0 - uS
Tf - 0.2 - uS
IB1=-IB2=50mA, Duty Cycle≤1%
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HA3669 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2002.04.18
Page No. : 2/3
10000
Current Gain & Collector Current
125oC
1000
25oC
hFE
100
1000
hFE @ VCE=2V
10
1 10 100 1000 10000
Collector Current-IC (mA)
Sat urati on Voltage & Col lector Current
25oC
75oC
75oC
1000
CE(sat)
V
100
Satur ation Voltage ( m V)
10
1 10 100 1000 10000
B
@ IC=20I
75oC
125oC
Collector Current- IC (mA)
25oC
Power Derating
800
700
600
500
Sat ura tion Voltage & C ollector C urrent
125oC
BE(sat)
V
Saturat ion Volta ge ( m V)
100
1 10 100 1000 10000
Collector Current- IC (mA)
@ IC=20I
400
300
B
200
Power Dis s ip ation- PD (mW)
100
0
0 50 100 150 200
Ambient Temperatur e - Ta (oC)
HA3669 HSMC Product Specification
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