HSMC H2N7002 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/4
H2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
SOT-23
Absolute Maximum Ratings
Drain-Source Voltage............................................................................................................. 60 V
Drain-Gate Voltage (RGS=1MΩ) ........................................................................................... 60 V
Gate-Source Voltage ........................................................................................................ +/-40 V
Continuous Drain Current (Ta=25°C)(1)........................................................................... 200 mA
Continuous Drain Current (Ta=100°C)(1)......................................................................... 115 mA
Pulsed Drain Current (Ta=25°C)(2)................................................................................... 800 mA
Total Power Dissipation (Tc=25°C) .................................................................................. 200 mW
Derate above 25°C................................................................................................... 0.16 Mw / °C
Storage Temperatur e............................................................................................... -55 to 150 °C
Operating Junction Temperature............................................................................. -55 to 150 °C
Lead Temperature, for 10 second Soldering...................................................................... 260 °C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient ................................................................... 625 °C / W
Characteristics
Parameter Symbol Test Conditions Min Typ. Max Unit
Drain-Source Breakdown Voltage BVDSS VGS=0, ID=10uA 60 - - V
Gate Threshold Voltage VGS(th) VDS=2.5V, ID=0.25mA 1 - 2.5 V
Gate Source Leakage Current, Forward IGSS/F VGS=+20V, VDS=0 - - 100 nA
Gate Source leakage Current, Reverse IGSS/R VGS=-20V, VDS=0 - - 100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0 - - 1 uA
On-State Drain Current ID(ON) VDS>2VDS(ON), VGS=10V 500 - - mA
Static Drain-Source On-State Voltage VDS(ON)
Static Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
Input Capacitance Ciss - - 50 pF
Output Capacitance Coss - - 25 pF
Reverse Transfer Capacitance Crss
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
(Ta=25°C)
G
ID=50mA, VGS=5V - - 0.375 V
ID=500mA, VGS=10V - - 3.75 V
ID=50mA, VGS=5V - - 7.5
ID=500mA, VGS=10V - - 7.5
VDS>2VDS(ON), ID=200mA 80 - - mS
FS
VDS=25V, VGS=0, f=1MHz
--5pF
Ω
Ω
H2N7002 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 2/4
1
0.9
0.8
VGS=10V
0.7
0.6
0.5
ID(A)
0.4
0.3
0.2
0.1
0
0246810
Output Characteristics
9V
8V
7V
6V
5V
4V
3V
VDS(V)
Typical Transconductance
0.5
0.45
VDS=7V
0.4
0.35
0.3
0.25
gFS(S)
0.2
0.15
0.1
0.05
0
0 0.2 0.4 0.6 0.8 1
ID(A)
Tj=-55ºC
Tj=25ºC
Tj=150ºC
0.8
0.7
VDS=10V
0.6
0.5
0.4
ID(A)
0.3
0.2
0.1
0
024681012
Tr ansfer Characterist ics
TJ=-55ºC Tj=25ºC
Tj=150ºC
VGS(V)
On-resistance versus Drain Current
10
VGS=4V VGS=6V
8
6
4
RDS(on)
2
0
0 0.2 0.4 0.6 0.8 1
ID(A)
VGS=8V
VGS=10V
70
60
50
40
C(pF)
30
20
10
0
0 1020304050
1.2
1.1
1
0.9
BVDSS(V)
0.8
0.7
0.6
-50 0 50 100 150
Breakdow n Volt age Variation Wit h T em per a t ure
VGS=0
ID=0.25mA
Capacitance
Ciss
Coss
Crss
VDS(V)
Tj Junction Temperature
2.5
2
)
Ω
1.5
1
On - Resistance Variat ion With Temperat ure
VGS=10V
ID=0.5A
RDS(on) (m
0.5
0
-50 0 50 100 150
0.8
0.7
0.6
0.5
0.4
Is(mA)
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Tj Junction Temperature
Source-Drain Diode Forward Voltage
Tj=150ºC Tj=25ºC
VSD(V)
Tj=-55ºC
H2N7002 HSMC Product Specification
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