HSMC H2N7000 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 1/4
H2N7000
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Description
The H2N7000 is designed for high voltage, high speed applications
such as switching regulators, converters, solenoid and relay drivers.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25°C)
•
BVDSS Drain to Source Voltage......................................................................................... 60 V
BVGSS Gate to Source Voltage ......................................................................................... 40 V
ID Drain Current............................................................................................................. 200 mA
Characteristics
Symbol Min. Ma x. Unit Test Co nditions
VDSS 60 - V ID=10uA, VGS=0
IDSS - 1 uA VDS=48V
IGSS
±
VGS(th) 0.8 3 V VDS=3V, ID=1mA
ID(on) 75 - mA VGS=4.5V, VDS=10V
RDS(on) - 5
VDSS(on)1 - 2.5 V VGS=10V, ID=0.5A
VDSS(on)2 - 0.4 v VGS=4.5V, ID=75mA
(Ta=25°C)
-
10
±
nA
Ω
VGS=±15V
VGS=10V, ID=0.5A
H2N7000 HSMC Product Specification
HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 2/4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID Drain-Source Current (A)
0.4
0.2
0.0
0246810
VDS, Drain- Source Voltage ( V)
VGS=10V
8V
7V
6
5V
4V
Transconductance Variation with Drain Current
On-Region Characterist ic
0.40
0.35
0.30
0.25
0.20
0.15
0.10
gFS, Tr ansconductanc e( S)
0.05
0.00
0.0 0.2 0.4 0.6 0.8 1.0
& Temperature
Tj=-55ºC
Tj=25ºC
Tj=150ºC
ID, Drain-Source Current (A)
Drain Current Variation with Gate Voltage
& Temperature
2.5
VDS=10V
2.0
1.5
1.0
ID Drain-Source Current (A)
0.5
0.0
0246810
VGS, G at e- Sour ce Voltage ( V)
Tj=-55ºC
Tj=25ºC
Tj=150ºC
Capacitance Characteristics
70
VGS=10V
f=1MHz
60
50
40
30
Capac itance (pF)
20
10
0
01020304050
VDS, Drain- Source Voltage ( V)
Ciss
Coss
Crss
On Resistance Variation with Temperature
2.5
ID=0.5A
VGS=10V
2.0
1.5
1.0
0.5
RDS(on ) , Normal ized On-Resistan c e
0.0
-50 0 50 100 150
Tj, Junction Temperature (ºC)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
IS, Source-Drain Current(A)
0.1
0.0
Body Di ode Forw ard Voltage Va riation
wi th C ur ren t & Temperature
Tj=150ºC
Tj=25ºC
Tj=-55ºC
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Sour ce- Dr ain Volt age (V)
H2N7000 HSMC Product Specification
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