HSMC H2N6718V Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 1/4
H2N6718V
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718V is designed for general purpose medium power
amplifier and switching .
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)................................................................................... 1.6 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 1 A
Electrical Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 100 - - V IC=100uA, IE=0
BVCEO 100 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 100 nA VCB=80V, IE=0
*VCE(sat) - - 350 mV IC=350mA, IB=35mA
*hFE1 80 - - IC=50mA, VCE=1V
*hFE2 50 - 250 IC=250mA, VCE=1V
*hFE3 20 - - IC=500mA, VCE=1V
fT 50 - - MHz VCE=10V, IC=50mA, f=100MHz
Cob - - 20 pF VCB=10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 2/4
1000
100
hFE
10
0.1 1 10 100 1000
100
Current Gain & Col lector Current
VCE=1V
Collector Curren t ( mA)
Capacit ance & Reverse- Bia sed Voltage
1000
100
Satu r ation Vol tage (m V)
CE(sat)
V
10
0.1 1 10 100 1000
Collector Curren t ( mA)
@ IC=10I
B
Cut o ff Fr equency & Col lector Current
1000
VCE=10V
Saturation Voltage & Collector Curr ent
10
Capac itance (pF)
1
0.1 1 10 100 1000
Reverse Biased Vol tage (V)
Cob
Safe Operating Area
10000
1000
(mA)
C
100
PT=1 ms
Collector Curren t- I
10
PT=100 ms
PT=1 s
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collector Curren t ( mA)
Power Derating
1800
1600
1400
1200
1000
800
600
Power Dissipation-PD(mW)
400
200
1
1 10 100 1000
Forwar d Vol tage-VCE (V)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature-Ta(oC)
HSMC Product Specification
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