HSMC H2N6520 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 1/3
H2N6520
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The H2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
The H2N6520 is complementary to H2N6517
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage ............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -350 - - V IC=-100uA, IE=0
BVCEO -350 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -50 nA VCB=-250V, IE=0
IEBO - - -50 nA VEB=-4V, IC=0
*VCE(sat)1 - - -0.30 V IC=-10mA, IB=-1mA
*VCE(sat)2 - - -0.35 V IC=-20mA, IB=-2mA
*VCE(sat)3 - - -0.50 V IC=-30mA, IB=-3mA
*VCE(sat)4 - - -1 V IC=-50mA, IB=-5mA
VBE(on) - - 2 V IC=-100mA, VCE=-10V
*VBE(sat)1 - - -0.75 V IC=-10mA, IB=-1mA
*VBE(sat)2 - - -0.85 V IC=-20mA, IB=-2mA
*VBE(sat)3 - - -0.90 V IC=-30mA, IB=-3mA
*hFE1 20 - - VCE=-10V, IC=-1mA
*hFE2 30 - - VCE=-10V, IC=-10mA
*hFE3 30 - 200 VCE=-10V, IC=-30mA
*hFE4 20 - 200 VCE=-10V, IC=-50mA
*hFE5 15 - - VCE=-10V, IC=-100mA
fT 40 - 200 MHz IC=-10mA, VCE=-20V, f=20MHz
Cob - - 6 pF VCB=-20V, f=1MHz, IE=0
(Ta=25°C,
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 2/3
100
10
hFE
1
0.01 0.1 1 10 100 1000
Current Gain & Collector Current
VCE=10V
Collector Current (mA)
On Voltage & Collector CurrentT
10000
100000
10000
1000
BE(sat)
V
100
Saturation Voltage (mV)
10
1
0.001 0.01 0.1 1 10 100 1000
B
@ IC=10I
CE(sat)
V
Collector Current (mA)
@ IC=10I
B
Cut off Fr equency & Collector Cu rrent
100
VCE=20V
Saturation Volt age & Coll ector Current
1000
On Voltage (mV)
100
0.01 0.1 1 10 100 1000
Collector Current (mA)
BE(ON)
V
@ VCE=10V
Capacitance & Reverse-Biased Volt age
100
10
Capacitance (pF)
Cob
Cutoff Frequency
10
1 10 100
Collector Current (mA)
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
1
0.1 1 10 100
Reverse-Biased Vol t a ge (V)
0
0 20 40 60 80 100 120 140 160
Ambient Temper atur e- Ta(oC)
HSMC Product Specification
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