HSMC H2N6517 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6268-B
Issued Date : 1993.10.05
Revised Date : 2000.09.25
Page No. : 1/4
H2N6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
The H2N6517 is complementary to H2N6520
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage.......................................................................................................... 5 V
IC Collector Current .................................................................................................................. 500 mA
IB Base Current ........................................................................................................................ 250 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 350 - - V IC=100uA, IE=0
BVCEO 350 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 50 nA VCB=250V, IE=0
IEBO - - 50 nA VEB=5V, IC=0
*VCE(sat)1 - - 0.30 V IC=10mA, IB=1mA
*VCE(sat)2 - - 0.35 V IC=20mA, IB=2mA
*VCE(sat)3 - - 0.50 V IC=30mA, IB=3mA
*VCE(sat)4 - - 1 V IC=50mA, IB=5 mA
VBE(on) - - 2 V IC= 100mA, VCE=10V
*VBE(sat)1 - - 0.75 V IC=10mA, IB=1mA
*VBE(sat)2 - - 0.85 V IC=20mA, IB=2mA
*VBE(sat)3 - - 0.90 V IC=30mA, IB=3mA
*hFE1 20 - - VCE=10V, IC=1mA
*hFE2 30 - - VCE=10V, IC=10m
*hFE3 30 - 200 VCE=10V, IC=30mA
*hFE4 20 - 200 VCE=10V, IC=50mA
*hFE5 15 - - VCE=10V, IC=100mA
fT 40 - 200 MHz IC=10mA, VCE=20V, f=20MHz
Cob - - 6 pF VCB=20V, f=1MHz, IE=0
(Ta=25°C,
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6268-B
Issued Date : 1993.10.05
Revised Date : 2000.09.25
Page No. : 2/4
1000
100
hFE
10
1
0.1 1 10 100 1000
10000
Current Gain & Collector Current
h F E @ V C E = 1 0
Collector Curren t (mA)
On Voltage & Collector Current
100000
10000
1000
Saturation Voltage (mV)
100
10
Satur ation Vol tage & Collector Current
BE(sat)
V
CE(sat)
V
10
0.1 1 10 100 1000
Collector Curren t (mA)
@ IC=10I
@ IC=10I
B
B
Capacitance & Reverse- Biased Voltage
Cob
1000
BE(on)
V
On Voltage (mV)
100
1 10 100 1000
100
Cutoff Frequency (MHz)
Cut off Fr equency & Collector Cur rent
@ VCE=10V
Collector Curren t (mA)
VCE=20V
Capac itan c e (pF )
1
0.1 1 10 100
10000
PT=1ms
PT=100ms
1000
(mA)
C
Collector Curren t-I
PT=1s
100
10
Reverse- Biased Vol t a ge ( V)
Sa fe Oper ating Area
10
1 10 100
Collector Curren t (mA)
1
1 10 100 1000
Forwar d Voltage- VCE (V)
HSMC Product Specification
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