HSMC H2N5551 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 1/4
H2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5551 is designed for amplifier transistor.
Features
• Complements to PNP Type H2N5401
• High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
TO-92
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 180 - - V IC=100uA, IE=0
BVCEO 160 - - V IC=1mA, IB=0
BVEBO 6 - - V IE=10uA, IC=0
ICBO - - 50 nA VCB=120V, IE=0
IEBO - - 50 nA VEB=4V, IC=0
*VCE(sat)1 - - 0.15 V IC=10mA, IB=1.0mA
*VCE(sat)2 - - 0.2 V IC=50mA, IB=5mA
*VBE(sat)1 - - 1 V IC=10mA, IB=1mA
*VBE(sat)2 - - 1 V IC=50mA, IB=5mA
*hFE1 80 - - VCE=5V, IC=1mA
*hFE2 80 160 400 VCE=5V, IC=10mA
*hFE3 50 - - VCE=5V, IC=50mA
fT 100 - 300 MHz VCE=10V, IC=10mA, f=100MHz
Cob - - 6 pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank A N C
Range 80-200 100-250 160-400
H2N5551 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 2/4
1000
125oC
100
hFE
10
1
25oC
75oC
hFE @ VCE=5V
1 10 100 1000
Collect o r Current- IC (mA)
Sat urati on Voltage & Coll ector Cu rrent
1000
25oC
Cur rent G ain & C o llector Current
100000
Sat uration Voltage & Collector Current
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
100
Capacita nce & Reverse-Biased Volta ge
B
@ IC=10I
125oC
Collect o r Current- IC (mA)
75oC
25oC
75oC
125oC
Saturation Voltage (mV)
100
0.1 1 10 100 1000
1000
100
Cutoff Fr equen cy ( M Hz)...
Collector Current- IC (mA)
Cut off Frequency & C ollector C urrent
BE(sat)
V
VCE=10V
@ IC=10I
10
Capacitance (pF)
B
1
0.1 1 10 100 1000
10000
1000
(mA)
C
100
10
Collect or Current-I
Cob
Reverse Biased Volt age (V)
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10
1 10 100
Collector Curren t (m A )
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
H2N5551 HSMC Product Specification
Loading...