HSMC H2N5401 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5401 is designed for general purpose applications requiring
high breakdown voltages.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 1/4
Features
• Complements to NPN Type H2N5551
• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -150 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -160 - - V IC=-100uA, IE=0
BVCEO -150 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -50 nA VCB=-120V, IE=0
IEBO - - -50 nA VEB=-3V. IC=0
*VCE(sat)1 - - -0.2 V IC=-10mA, IB=-1mA
*VCE(sat)2 - - -0.5 V IC=-50mA, IB=-5mA
*VBE(sat)1 - - -1 V IC=-10mA, IB=-1mA
*VBE(sat)2 - - -1 V IC=-50mA, IB=-5mA
*hFE1 50 - - VCE=-5V, IC=-1mA
*hFE2 80 160 400 VCE=-5V, IC=-10mA
*hFE3 50 - - VCE=-5V, IC=-50mA
fT 100 - 300 MHz VCE=-10V, IC=-10mA, f=100MHz
Cob - - 6 pF VCB=-10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank A N C
Range 80-200 100-240 160-400
H2N5401 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 2/4
1000
Current Gain & Coll ector Current
125oC
100
hFE
10
1
1000
25oC
75oC
hFE @ VCE=5V
1 10 100 1000
Collec tor Current-IC (mA)
Sat urati on Voltage & C ol lector C urrent
25oC
100000
Saturation Voltage & Col lector Current
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
100
Capacitance & Reverse- Biased Voltage
B
@ IC=10I
125oC
Collector Current-IC (mA)
75oC
25oC
75oC
125oC
BE(sat)
V
Saturat ion Volta ge ( m V)
100
0.1 1 10 100 1000
1000
100
Cutoff Fr equen cy ( M Hz)...
Collector Current-IC (mA)
Cutoff Frequency & IC
VCE=10V
@ IC=10I
10
Cob
B
Capacitance (pF)
1
0.1 1 10 100
10000
1000
(mA)
C
Collect o r Cur r e n t-I
PT=1s
100
10
Reverse Biased Vol t ag e ( V)
Safe Operating Area
PT=1ms
PT=100ms
10
1 10 100
Collector Curren t-IC (mA)
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
H2N5401 HSMC Product Specification
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